journal article·2022-08Open access

Charge Balance in Red QLEDs for High Efficiency and Stability via Ionic Liquid Doping

Yunfei Li, Xi Fan, Cai Shen, Xixiu Shi, Pengcheng Li, Kwun Nam Hui, Junpeng Fan, Kai Kang, Ting Zhang, Lei Qian

Advanced Functional Materials· Volume 32· Issue 32

Abstract

Abstract Colloidal quantum dot light‐emitting diodes (QLEDs) simultaneously exhibiting high external quantum efficiency (EQE) and operation stability are achieved via a simple solution processing. A silver bis(trifluoromethane‐sulfonyl)imide treatment that is used to chemically dope the poly(3,4‐ethylenedioxythiophene):poly(4‐styrenesulfonate) (PEDOT:PSS) hole injection layer (HIL) is proposed. The ionic liquid salt acts as an effective p‐dopant for high charge concentrations; and it raises the work functions and surface potentials of the PEDOT:PSS HIL for an interface energy band alignment. Benefiting from a raised hole mobility and a better charge mobility balance, the processing‐simple colloidal red QLEDs yielded the highest EQE of up to 17.4%. In particular, a very broad plateau of EQE values over 16.5% in the brightness of 400–10 000 cd m−2 is obtained. Moreover, the packaged QLEDs exhibit an excellent operation stability in ambient air. The T95 (time for the device brightness to decrease to 95% of its initial brightness) at an initial brightness of 1000 cd m−2 is 4160 h. The work highlights a promising ionic liquid strategy to guide the development of high‐performance and cost‐effective QLEDs.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: Quantum Dots Synthesis And Properties · Perovskite Materials and Applications · Nanocluster Synthesis and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Division of Functional Materials and Nanodevices Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo 315201 China

Zhejiang Provincial Engineering Research Center of Energy Optoelectronic Materials and Devices Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo 315201 China

Hubei Key Laboratory of Plasma Chemistry and Advanced Materials Hubei Engineering Technology Research Center of Optoelectronic and New Energy Materials School of Materials Science and Engineering Wuhan Institute of Technology Wuhan 430205 China

Joint Key Laboratory of the Ministry of Education Institute of Applied Physics and Materials Engineering University of Macau Avenida da Universidade Taipa Macau SAR 999078 China

References (34)

Show source-provided references
1. 10.1038/nphoton.2007.22610.1038/nphoton.2007.226 ↗
2. 10.1002/aenm.20180335410.1002/aenm.201803354 ↗
3. 10.1021/acs.jpclett.9b0018910.1021/acs.jpclett.9b00189 ↗
4. 10.1039/D0NR02074E10.1039/D0NR02074E ↗
5. 10.1002/smll.20200736310.1002/smll.202007363 ↗
6. 10.1038/nphoton.2015.3610.1038/nphoton.2015.36 ↗
7. 10.1038/s41566-021-00857-010.1038/s41566-021-00857-0 ↗
8. 10.1038/s41467-018-04986-z10.1038/s41467-018-04986-z ↗
9. 10.1002/adfm.20170427810.1002/adfm.201704278 ↗
10. 10.1002/adfm.20190726510.1002/adfm.201907265 ↗
11. 10.1021/acsphotonics.8b0167210.1021/acsphotonics.8b01672 ↗
12. 10.1038/nature1382910.1038/nature13829 ↗
13. 10.1002/adma.20180138710.1002/adma.201801387 ↗
14. 10.1007/s12274-021-3352-910.1007/s12274-021-3352-9 ↗
15. 10.1021/acsami.6b0138910.1021/acsami.6b01389 ↗
16. 10.1007/s40820-020-00566-310.1007/s40820-020-00566-3 ↗
17. 10.1002/adfm.20200939910.1002/adfm.202009399 ↗
18. 10.1039/D0TA07934K10.1039/D0TA07934K ↗
19. 10.1016/j.orgel.2014.12.03010.1016/j.orgel.2014.12.030 ↗
20. 10.1063/1.481723910.1063/1.4817239 ↗
21. 10.1038/ncomms366110.1038/ncomms3661 ↗
22. 10.1021/cr400704v10.1021/cr400704v ↗
23. 10.1039/D0TA11831A10.1039/D0TA11831A ↗
24. 10.1002/adma.20140418910.1002/adma.201404189 ↗
25. 10.1039/C4TC01033G10.1039/C4TC01033G ↗
26. 10.1039/C8EE01500G10.1039/C8EE01500G ↗
27. 10.1002/adfm.20100016410.1002/adfm.201000164 ↗
28. 10.1021/ma990567410.1021/ma9905674 ↗
29. 10.1002/adfm.20040001610.1002/adfm.200400016 ↗
30. 10.1016/j.mattod.2018.09.00210.1016/j.mattod.2018.09.002 ↗
31. 10.1038/s41467-020-14756-510.1038/s41467-020-14756-5 ↗
32. 10.1039/C7NR04953F10.1039/C7NR04953F ↗
33. 10.1021/acsnano.7b0786710.1021/acsnano.7b07867 ↗
34. Lee T. · Adv. Mater. · 2021 · 2106276