Vacuum Electrodeposition of Cu(In, Ga)Se2 Thin Films and Controlling the Ga Incorporation Route
Source abstract
Abstract
The traditional electrochemical deposition process used to prepare Cu(In, Ga)Se2 (CIGS) thin films has inherent flaws, such as the tendency to produce low-conductivity Ga2O3 phase and internal defects. In this article, CIGS thin films were prepared under vacuum (3 kPa), and the mechanism of vacuum electrodeposition CIGS was illustrated. The route of Ga incorporation into the thin films could be controlled in a vacuum environment via inhibiting pH changes at the cathode region. Through the incorporation of a low-conductivity secondary phase, Ga2O3 was inhibited at 3 kPa, as shown by Raman and X-ray photoelectron spectroscopy. The preparation process used a higher current density and a lower diffusion impedance and charge transfer impedance. The films that were produced had larger particle sizes.
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Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Copper-based nanomaterials and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Key Laboratory for Nonferrous Vacuum Metallurgy of Yunnan Province, Kunming University of Science and Technology, Kunming 650093, China
National Engineering Research Center of Vacuum Metallurgy, Kunming University of Science and Technology, Kunming 650093, China
Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming 650093, China
State Key Laboratory of Complex Non-Ferrous Metal Resources Clean Utilization, Kunming University of Science and Technology, Kunming 650093, China
Funding
National Natural Science Foundation of China · Natural Science Foundation of Yunnan Province · National Key Research and Development Program of China
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