Demonstration of III-Nitride Red LEDs on Si Substrates via Strain-Relaxed Template by InGaN Decomposition Layer
Source abstract
Abstract
A III-nitride red LED with an active region temperature of 835 °C on a Si substrate utilizing a strain-relaxed template (SRT) is demonstrated. The peak wavelength blueshifts from 670 nm at 1 A/cm2 to 636 nm at 150 A/cm2. The on-wafer external quantum efficiency was 0.021% at 7 A/cm2 with an emission wavelength of 655 nm. The LED grown on a Si substrate exhibited a 116 nm redshift when compared to a co-loaded LED grown on sapphire. This is attributed to the difference in strain state for the III-nitride layers grown on Si compared to sapphire, allowing for more indium to be incorporated in the LED grown on Si. This suggests efficient III-nitride red LEDs and µLEDs on Si with a SRT can be realized with further material, device structure, and processing optimizations.
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Research context
OpenAlex topics: GaN-based semiconductor devices and materials · ZnO doping and properties · Ga2O3 and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Materials Department, University of California, Santa Barbara, CA 93106, USA
Chemical Engineering Department, University of California, Santa Barbara, CA 93106, USA
Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, USA
Funding
Solid-State Lighting and Energy Electronics Center (SSLEEC) at the University of California, Santa Barbara (UCSB) · Defense Advanced Research Project (DARPA), U.S. Department of Defense
References (55)
Show source-provided references
1. Review—Progress in High Performance III-Nitride Micro-Light-Emitting Diodes10.1149/2.0302001JSS ↗
2. InGaN Micro-LED Array Enabled Advanced Underwater Wireless Optical Communication10.1002/adom.202002211 ↗
3. Highly polarized photoluminescence from c-plane InGaN/GaN multiple quantum wells on stripe-shaped cavity-engineered sapphire substrate10.1038/s41598-019-44519-2 ↗
4. Demonstration of ultra-small (<10 μm) 632 nm red InGaN micro-LEDs with useful on-wafer external quantum efficiency (>0.2%) for mini-displays10.35848/1882-0786/abd06f ↗
5. 1.4x efficiency improvement in transparent-substrate AlGaInP light emitting diodes with thin (≤2000Å) active regions10.1063/1.123810 ↗
6. High-power truncate-inverted-pyramid AlGaInP/GaP light-emitting diodes exhibiting >50% external quantum efficiency10.1063/1.125016 ↗
7. Impact of surface recombination on efficiency of III-nitride.pdf10.1002/pssr.201600059 ↗
8. Light output performance of red AlGaInP-based light emitting diodes with different chip geometries and structures10.1364/OE.26.011194 ↗
9. Revealing the importance of light extraction efficiency in InGaN/GaN microLEDs via chemical treatment and dielectric passivation10.1063/5.0011651 ↗
10. Current- and temperature-dependent efficiency droops in InGaN-based blue and AlGaInP-based red light-emitting diodes10.7567/1347-4065/ab09db ↗
11. Realization of Highly Efficient InGaN Green LEDs with Sandwich-like Multiple Quantum Well Structure: Role of Enhanced Interwell Carrier Transport10.1021/acsphotonics.8b01040 ↗
12. Wong, M.S., Chan, P., Lim, N., Zhang, H., White, R.C., Speck, J.S., Denbaars, S.P., and Nakamura, S. (2022). Low Forward Voltage III-Nitride Red Micro-Light-Emitting Diodes on a Strain Relaxed Template with an InGaN Decomposition Layer. Crystals, 12.10.3390/cryst12050721 ↗
13. White light emitting diodes with super-high luminous efficacy10.1088/0022-3727/43/35/354002 ↗
14. Hybrid functional investigations of band gaps and band alignments for AlN, GaN, InN, and InGaN10.1063/1.3548872 ↗
15. Indium nitride (InN): A review on growth, characterization, and properties10.1063/1.1595135 ↗
16. Lattice parameters of gallium nitride10.1063/1.118123 ↗
17. Compositional pulling effects in InGaN/GaN layers: A combined depth-resolved cathodoluminescence and Rutherford backscattering/channeling study10.1103/PhysRevB.64.205311 ↗
18. Thermal stability and desorption of Group III nitrides prepared by metal organic chemical vapor deposition
19. Enhanced In incorporation in full InGaN heterostructure grown on relaxed InGaN pseudo-substrate10.1063/1.4989998 ↗
20. Fabrication of relaxed InGaN pseudo-substrates composed of micron-sized pattern arrays with high fill factors using porous GaN10.1088/1361-6641/ab4372 ↗
21. Growth of strain-relaxed InGaN on micrometer-sized patterned compliant GaN pseudo-substrates10.1063/5.0001480 ↗
22. Growth of highly relaxed InGaN pseudo-substrates over full 2-in. wafers10.1063/5.0064755 ↗
23. Demonstration of relaxed InGaN-based red LEDs grown with high active region temperature10.35848/1882-0786/ac251d ↗
24. Role of Metal Vacancies in the Mechanism of Thermal Degradation of InGaN Quantum Wells10.1021/acsami.0c21293 ↗
25. Temperature dependence of the indirect energy gap in crystalline silicon10.1063/1.362447 ↗
26. Precise determination of lattice parameter and thermal expansion coefficient of silicon between 300 and 1500 K10.1063/1.333965 ↗
27. Heteroepitaxial wurtzite and zinc-blende structure GaN grown by reactive-ion molecular-beam epitaxy: Growth kinetics, microstructure, and properties10.1063/1.353882 ↗
28. Effects of AlN interlayer on growth of GaN-based LED on patterned silicon substrate10.1039/c3ce27059a ↗
29. Efficient InGaN-based yellow-light-emitting diodes10.1364/PRJ.7.000144 ↗
30. Efficient emission of InGaN-based light-emitting diodes: Toward orange and red10.1364/PRJ.402555 ↗
31. Strain determination in heteroepitaxial GaN10.1063/1.119659 ↗
32. High-resolution X-ray diffraction strain–stress analysis of GaN/sapphire heterostructures10.1088/0022-3727/34/10A/308 ↗
33. Comparison of size-dependent characteristics of blue and green InGaN microLEDs down to 1 μm in diameter10.1063/1.5144819 ↗
34. Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells10.1143/JJAP.36.L382 ↗
35. Effects of local structure on optical properties in green-yellow InGaN/GaN quantum wells10.1117/12.2002707 ↗
36. Spontaneous emission of localized excitons in InGaN single and multiquantum well structures10.1063/1.116981 ↗
37. Demonstration of 621-nm-wavelength InGaN- based single-quantum-well LEDs with an external quantum efficiency of 4.3% at 10.1 A/cm210.1063/5.0097761 ↗
38. Development of InGaN-based red LED grown on (0001) polar surface10.7567/APEX.7.071003 ↗
39. Blue, green, and amber InGaN/GaN light-emitting diodes on semipolar {1122} GaN bulk substrates10.1143/JJAP.45.L659 ↗
40. Red InGaN micro-light-emitting diodes (>620 nm) with a peak external quantum efficiency of 4.5% using an epitaxial tunnel junction contact10.1063/5.0086912 ↗
41. Accurate value for the absorption coefficient of silicon at 633 nm10.6028/jres.095.043 ↗
42. Absorption coefficients of crystalline silicon at wavelengths from 500 nm to 1000 nm10.1007/s10765-013-1414-2 ↗
43. Status of GaN-based green light-emitting diodes10.1088/1674-1056/24/6/067804 ↗
44. Temperature-Dependent Electroluminescence Efficiency in Blue InGaN-GaN Light-Emitting Diodes with Different Well Widths10.1109/LPT.2009.2037827 ↗
45. Direct measurement of auger electrons emitted from a semiconductor light-emitting diode under electrical injection: Identification of the dominant mechanism for efficiency droop10.1103/PhysRevLett.110.177406 ↗
46. White, R.C., Li, H., Khoury, M., Lynsky, C., Iza, M., Keller, S., Sotta, D., Nakamura, S., and Denbaars, S.P. (2021). Ingan-based microled devices approaching 1% eqe with red 609 nm electroluminescence on semi-relaxed substrates. Crystals, 11.10.3390/cryst11111364 ↗
47. Full InGaN red (625 nm) micro-LED (10 μm) demonstration on a relaxed pseudo-substrate10.35848/1882-0786/ac1b3e ↗
48. Sustained high external quantum efficiency in ultrasmall blue III-nitride micro-LEDs10.7567/APEX.10.032101 ↗
49. Tensile stress generation and dislocation reduction in Si-doped AlGaN films10.1063/1.3160331 ↗
50. Cracking of III-nitride layers with strain gradients10.1063/1.2352043 ↗
51. Si doping effect on strain reduction in compressively strained Al 0.49Ga0.51N thin films10.1063/1.1595133 ↗
52. Role of inclined threading dislocations in stress relaxation in mismatched layers10.1063/1.1897486 ↗
53. Stress relaxation in mismatched layers due to threading dislocation inclination10.1063/1.1613360 ↗
54. Influence of hydrogen and TMIn on indium incorporation in MOVPE growth of InGaN layers10.1016/j.jcrysgro.2014.05.027 ↗
55. Comparison of different pathways in metamorphic graded buffers on GaAs substrate: Indium incorporation with surface roughness10.1016/j.apsusc.2014.10.155 ↗