High-Drain Field Impacting Channel-Length Modulation Effect for Nano-Node N-Channel FinFETs
Source abstract
Abstract
Three dimensional (3-D) FinFET devices with an ultra-high Si-fin aspect ratio have been developed after integrating a 14Å nitrided gate oxide upon the silicon on insulator (SOI) wafers through an advanced CMOS logic platform. Under the lower gate voltage (VGS-VT) and the higher drain/source voltage VDS, the channel-length modulation (CLM) effect coming from the interaction impact of vertical gate field and horizontal drain field was increased and had to be revised well as the channel length L was decreased. Compared to the 28-nm MOSFETs, the interaction effect from the previous at the tested FinFETs on SOI substrate with the short-channel length L is lower than that at the 28-nm device, which means the interaction severity of both fields for nFinFETs is mitigated, but still necessary to be concerned.
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Research context
OpenAlex topics: Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design · Integrated Circuits and Semiconductor Failure Analysis
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Electronic Engineering, Minghsin University of Science and Technology, Hsinchu 30401, Taiwan
Department of Electro-Optical Engineering, Minghsin University of Science and Technology, Hsinchu 30401, Taiwan
Department of Mechanical Engineering, National Taipei University of Technology, Taipei 10608, Taiwan
Department of Mechanical Engineering, Minghsin University of Science and Technology, Hsinchu 30401, Taiwan
Department of Electrical Engineering, National University of Kaohsiung, Kaohsiung 81148, Taiwan
References (58)
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