Annealing Induced Saturation in Electron Concentration for V-Doped CdO
Source abstract
Abstract
As-grown Ar-deposited Cd1−xVxO and Ar/O2-deposited Cd1−yVyO feature lower and higher electron concentrations than 4 × 1020 cm−3, respectively. After isothermal and isochronal annealing under N2 ambient, we find that the two series exhibit a decrease or increase in electron concentrations until ~4 × 1020 cm−3 which is close to Fermi stabilization energy (EFS) level of CdO, with the assistance of native defects. An amphoteric defects model is used to explain the changing trends in electron concentrations. The tendencies in mobility further confirm our results. This work may provide some strategies to predict the electrical properties in CdO.
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Research context
OpenAlex topics: ZnO doping and properties · Copper-based nanomaterials and applications · Electronic and Structural Properties of Oxides
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Guangdong Provincial Key Laboratory of Electronic Functional Materials and Devices, Huizhou University, Huizhou 516007, China
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
Physics Department and Jiangsu Key Laboratory for Chemistry of Low Dimensional Materials, Huaiyin Normal University, Huaian 223001, China
Department of Physics, City University of Hong Kong, Kowloon Tong, Hong Kong 999077, China
Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, USA
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