Crystal Growth of RuS2 Using a Chemical Vapor Transport Technique and Its Properties
Source abstract
Abstract
In this work, we study the effect of increasing temperature on the structure parameters (lattice, sulfur–sulfur distance, and ruthenium–sulfur distance) and the energy gap of RuS2. However, it was very challenging to obtain a sample of RuS2 due to many factors, some of which are discussed in the introduction. To prepare the crystal growth of RuS2, we have used the chemical vapor transport technique. The crystals obtained show a pyrite structure, of which we studied its crystallographic structure, including the structure of crystals in surface (100). The sample was then characterized by X-ray diffraction and by microprobe analysis. We determine the relationship between the energy gap and the sulfur–sulfur distance. We analyzed the S-S bond compared with the S2 molecule.
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Research context
OpenAlex topics: Molecular Junctions and Nanostructures · Surface and Thin Film Phenomena · Copper-based nanomaterials and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Laboratory of Semiconductors, Nanostructures and Advanced Technologies, Borj Cedria Science and Technology Park, BP 95, Hammam-Lif 2050, Tunisia
Departement de Physique, Faculté des Sciences de Bizerte, Université de Carthage, Tunis 7021, Tunisia
Groupe d’Etude de la Matière Condensée, CNRS-Université de Versailles St-Quentin 1, Place A, Briand, CEDEX, F-92195 Meudon, France
Department of Physics and Astronomy, King Saud University, Riyadh 11451, Saudi Arabia
References (15)
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