DataVXCrystal Growth & DesignPaper
journal article·2015-08-05

An Order–Disorder Transition in Surface Complexions and Its Influence on Crystal Growth of Boron-Rich Nanostructures

Zhiyang Yu, Jian Luo, Martin P. Harmer, Jing Zhu

Crystal Growth & Design· Volume 15· Issue 8
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Source abstract

Abstract

Controlled fabrication of boron-rich nanostructures was achieved by manipulating the processing temperature: high-temperature processing (1400–1500 °C) produced mainly tabular platelets with parallel twinning cross sections, whereas low-temperature processing (1100–1200 °C) facilitated the growth of star-shaped nanowires with cyclic twinning cross sections. This study revealed that this growth habit transition was related to the structural order of the adsorbed Ba atoms in nanoscale surficial films, which is a type of surface complexion (stable equilibrium phase-like surface states). It is demonstrated that an order–disorder transition in these surface complexions can play a critical role in determining the growth habits of crystals.
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Research context

Nanomaterials

OpenAlex topics: Copper-based nanomaterials and applications · Electronic and Structural Properties of Oxides · Nanowire Synthesis and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Beijing National Center for Electron Microscopy, School of Materials Science and Engineering, The State Key Laboratory of New Ceramics and Fine Processing, Laboratory of Advanced Materials (MOE), Tsinghua University, Beijing 100084, China

Center for Advanced Materials and Nanotechnology, Department of Materials Science and Engineering, Lehigh University, Bethlehem, Pennsylvania 18015, United States

Department of NanoEngineering, Program of Materials Science and Engineering, University of California, San Diego, La Jolla, California 92093, United States

Funding

Office of Naval Research · U.S. Department of Defense · Division of Materials Research · National Natural Science Foundation of China · Ministry of Science and Technology of the People's Republic of China

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