Crystallization of Si Templates of Controlled Shape, Size, and Orientation: Toward Micro- and Nanosubstrates

Fiber-textured polycrystalline silicon thin films have demonstrated their interest as seed layers for the epitaxial growth of high-quality materials on substrates such as glass or plastics. In the present work, we report a comprehensive study of the aluminum-induced crystallization (AIC) of isolated Si domains. Our study not only demonstrates the fabrication by AIC of shape- and size-controlled Si monocrystals at the nanoscale but also allows for the prediction of minimal annealing conditions for complete crystallization of such structures. These ultrathin [111]-oriented monocrystals are promising candidates as selected-area epitaxy substrates with both an easy control on the morphology of these structures and a low-temperature fabrication process.