Growth of Epitaxial Anatase Nano Islands on SrTiO3(001) by Dip Coating
Source abstract
Abstract
High temperature annealing of ultrathin anatase-TiO 2 (001) thin films deposited on SrTiO 3 (001) substrates by a dip coating method leads to the self-assembly of an array of square-shaped epitaxial anatase islands with lateral dimensions of order 150 nm. The procedure developed here provides a very cheap and simple approach to preparation of oriented anatase nanocrystals with a distribution of surface terminations very different to that found in free-standing material. In particular, the {101} facets which are dominant for unsupported nanocrystalline anatase are completely absent, and the (001) islands are instead bounded by sloping {103} side facets.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Electronic and Structural Properties of Oxides · Advanced Photocatalysis Techniques · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
University of Oxford, Department of Chemistry, Inorganic Chemistry Laboratory, South Parks Road, Oxford OX1 3QR, U.K.
Department of Physics, University of York, Heslington, York, YO10 5DD, U.K.
XMaS CRG Beamline, European Synchrotron Radiation Facility, 38043 Grenoble Cedex 9, France and Department of Physics, University of Liverpool, Liverpool, L69 7ZE, U.K.
Department of Materials, Imperial College London, Exhibition Road, London, SW7 2AZ, U.K.
References (56)
Show source-provided references
1. Asahi R. · Science · 2001 · 293 · 26910.1126/science.1061051 ↗
2. Di Valentin C. · Chem. Phys. · 2007 · 339 · 4410.1016/j.chemphys.2007.07.020 ↗
3. Qiu X. F. · Chem. Phys. · 2007 · 339 · 110.1016/j.chemphys.2007.06.039 ↗
4. Linsebigler A. L. · Chem. Rev. · 1995 · 95 · 73510.1021/cr00035a013 ↗
5. Wong J. C. S. · J. Phys. Chem. · 1995 · 99 · 33510.1021/j100001a051 ↗
6. Carp O. · Prog. Solid State Chem. · 2004 · 32 · 3310.1016/j.progsolidstchem.2004.08.001 ↗
7. Mo S. D. · Phys. Rev. B · 1995 · 51 · 1302310.1103/PhysRevB.51.13023 ↗
8. Labat F. · J. Chem. Phys. · 2007 · 126 · No.154703–110.1063/1.2717168 ↗
9. Tang H. · J. Appl. Phys. · 1994 · 75 · 204210.1063/1.356306 ↗
10. Rao K. V. K. · J. Am. Ceram. Soc. · 1970 · 53 · 12410.1111/j.1151-2916.1970.tb12051.x ↗
11. Semiconductors: Physics of Non-Tetrahedrally Bonded Binary Compounds II;Springer Verlag:Berlin, 1984; Vol.17, Pt. f.
12. Tang H. · Phys. Rev. B · 1995 · 52 · 777110.1103/PhysRevB.52.7771 ↗
13. Czanderna A. W. · Trans. Faraday Soc. · 1958 · 54 · 106910.1039/TF9585401069 ↗
14. Yoganarasimhan S. R. · Trans. Faraday Soc. · 1962 · 58 · 157910.1039/TF9625801579 ↗
15. Czanderna A. W. · J. Am. Ceram. Soc. · 1957 · 79 · 5407
16. Iida Y. · J. Am. Ceram. Soc. · 1961 · 44 · 12010.1111/j.1151-2916.1961.tb13725.x ↗
17. Shannon R. D. · J. Am. Ceram. Soc. · 1965 · 48 · 39110.1111/j.1151-2916.1965.tb14774.x ↗
18. Murakami M. · Appl. Phys. Lett. · 2001 · 78 · 266410.1063/1.1365412 ↗
19. Park B. H. · Appl. Phys. Lett. · 2002 · 80 · 117410.1063/1.1450249 ↗
20. Matsumoto Y. · Science · 2001 · 291 · 85410.1126/science.1056186 ↗
21. Ong C. K. · Appl. Surf. Sci. · 2001 · 185 · 4710.1016/S0169-4332(01)00589-X ↗
22. Kennedy R. J. · J. Cryst. Growth · 2003 · 252 · 33310.1016/S0022-0248(02)02514-9 ↗
23. Jellison G. E. · J. Appl. Phys. · 2003 · 93 · 953710.1063/1.1573737 ↗
24. Shao R. · Surf. Sci. · 2007 · 601 · 158210.1016/j.susc.2007.01.039 ↗
25. Weng X. · J. Cryst. Growth · 2008 · 310 · 54510.1016/j.jcrysgro.2007.10.084 ↗
26. Xu L. M. · Scr. Mater. · 2010 · 63 · 11310.1016/j.scriptamat.2010.03.027 ↗
27. Chambers S. A. · Appl. Phys. Lett. · 2001 · 79 · 346710.1063/1.1420434 ↗
28. Chambers S. A. · Thin Solid Films · 2002 · 418 · 19710.1016/S0040-6090(02)00709-5 ↗
29. Lotnyk A. · Thin Solid Films · 2007 · 515 · 343910.1016/j.tsf.2006.10.106 ↗
30. Jung H. S. · J. Phys. Chem. C · 2008 · 112 · 420510.1021/jp076194n ↗
31. Chan K. Y. S. · J. Electrochem. Soc. · 2009 · 156 · D23110.1149/1.3125766 ↗
32. Zhang Z. M. · J. Mater. Res. · 2005 · 20 · 29210.1557/JMR.2005.0036 ↗
33. Brown S. D. · J. Synchrotron Radiat. · 2001 · 8 · 117210.1107/S0909049501015394 ↗
34. Coll M. · Phys. Rev. B · 2006 · 73 · No. 075420–110.1103/PhysRevB.73.075420 ↗
35. Babkevich A. Y. · J. Phys.: Condens Matter · 2002 · 14 · 7101
36. Regoutz A. · J. Mater. Res. · 2012 · 27 · 225710.1557/jmr.2012.162 ↗
37. Zhang K. H. L. · J. Cryst. Growth · 2011 · 318 · 34510.1016/j.jcrysgro.2010.10.143 ↗
38. deLigny D. · Phys. Rev. B · 1996 · 53 · 301310.1103/PhysRevB.53.3013 ↗
39. Olson C. L. · J. Phys. Chem. B · 2006 · 110 · 999510.1021/jp057261l ↗
40. Zhao Z. Y. · J. Phys. - Condens. Matter · 2010 · 22 · No. 175008–1
41. Lazzeri M. · Phys. Rev. B · 2001 · 63 · No. 155409–110.1103/PhysRevB.63.155409 ↗
42. Lazzeri M. · Phys. Rev. B · 2002 · 65 · No. 119901(E)10.1103/PhysRevB.65.119901 ↗
43. Heifets E. · Phys. Rev. B · 2001 · 64 · 235417–110.1103/PhysRevB.64.235417 ↗
44. Yang H. G. · Nature · 2008 · 453 · 63810.1038/nature06964 ↗
45. Jun Y. · J. Am. Chem. Soc. · 2003 · 125 · 1598110.1021/ja0369515 ↗
46. Herman G. S. · Phys. Rev. Lett. · 2000 · 84 · 335410.1103/PhysRevLett.84.3354 ↗
47. Marshall M. S. J. · Phys. Rev. Lett. · 2009 · 102 · 146102–22–1
48. Marzin J. Y. · Phys. Rev. Lett. · 1994 · 73 · 71610.1103/PhysRevLett.73.716 ↗
49. Schaffer W. J. · J. Vac. Sci. Technol. B · 1983 · 1 · 68810.1116/1.582579 ↗
50. Yoffe A. D. · Adv. Phys. · 2001 · 50 · 110.1080/00018730010006608 ↗
51. Medeiros-Ribeiro G. · Science · 1998 · 279 · 35310.1126/science.279.5349.353 ↗
52. Ross F. M. · Science · 1999 · 286 · 193110.1126/science.286.5446.1931 ↗
53. Zhao L. · J. Mater. Res. · 1996 · 11 · 132510.1557/JMR.1996.0167 ↗
54. Seifert A. · J. Mater. Res. · 1996 · 11 · 147010.1557/JMR.1996.0183 ↗
55. Szafraniak I. · Appl. Phys. Lett. · 2003 · 83 · 221110.1063/1.1611258 ↗
56. Langjahr P. A. · J. Mater. Res. · 1999 · 14 · 294510.1557/JMR.1999.0394 ↗