Chemical Structures of the SiO2Si Interface
Source abstract
Abstract
Abstract As a result of considerable progress in microfabrication technology for ultra-large scale integration (ULSI), it has become necessary to control oxide formation on an atomic scale in order to produce defect-free SiO2/Si interfaces. However, the possibility of forming an atomically flat interface by oxidizing an atomically flat silicon surface without introducing structural defects is not yet clarified. In this article the present understanding of chemical structures of SiO2/Si interfaces and initial stage of oxidation of silicon surfaces are reviewed.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Semiconductor materials and devices · Integrated Circuits and Semiconductor Failure Analysis · Silicon Nanostructures and Photoluminescence
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (100+)
Show source-provided references
1. 10.1109/EDL.1987.2669510.1109/EDL.1987.26695 ↗
2. Sasaki Momose H. · 1994
3. Horiguchi, M., Sakata, T., Sekiguchi, T., Ueda, S., Tanaka, H., Yamasaki, E., Nakagome, Y., Aoki, M., Kaga, T., Ohkura, M., Nagai, R., Murai, F., Tanaka, T., Iijima, S., Yokoyama, N., Gotoh, Y., Shoji, K., Kisu, T., Yamashita, H., Nishida, T. and Takeda, E. Conf. Int. Solid-state Circuits. pp.252 Digest of Technical Papers
4. Sugibayashi, T., Naritake, I., Utsugi, S., Shibahara, K., Oikawa, R., Mori, H., Iwao, S., Murotani, T., Koyama, K., Fukazawa, S., Itani, T., Kasama, K., Okuda, T., Ohya, S. and Ogawa, M. Conf. Int. Solid-state Circuits. pp.254 Digest of Technical Papers
5. Seidel, T. E. 1994 Int. Symp. Semiconductor Manufacturing. Tokyo. pp.14
6. Fischetti M. V. · Phys. Rev. · 1987 · 35 · 440410.1103/PhysRevB.35.4404 ↗
7. 10.1063/1.10515510.1063/1.105155 ↗
8. Pantelides S. T. · 1978
9. Lucovsky G. · 1980
10. Roberts G. G. · 1979
11. Schulz M. · 198110.1007/978-3-642-68247-6 ↗
12. Verweij J. F. · 1983
13. Simmone J. J. · 1986
14. Declerck G. · 1987
15. Pantelides S. T. · 1987 · 105
16. Balk P. · 1988
17. Koch F. · 1989
18. Eccleston W. · 1991
19. Balk P. · 1993
20. Nicollian E. H. · 1982
21. Bauer R. S. · 1985 · 10
22. 10.1016/S0920-2307(86)80001-910.1016/S0920-2307(86)80001-9 ↗
23. Himpsel, F. J., Meyerson, B. S., McFeely, F. R., Morar, J. F., Taleb-Ibrahimi, A. and Yarmoff, J. A. 1990.Proceedings of the Enrico Fermi School on Photoemission and Absorption Spectroscopy of Solids and Interfaces with Synchrotron Radiation, Edited by: Campagna, M. and Rosei, R. 203Amsterdam: North-Holland.
24. 10.1143/JJAP.10.5210.1143/JJAP.10.52 ↗
25. 10.1063/1.32877110.1063/1.328771 ↗
26. 10.1063/1.9761110.1063/1.97611 ↗
27. 10.1063/1.9673610.1063/1.96736 ↗
28. 10.1063/1.9424410.1063/1.94244 ↗
29. Stesmans A. · Phys. Rev. · 1991 · 44 · 1135310.1103/PhysRevB.44.11353 ↗
30. 10.1063/1.10524410.1063/1.105244 ↗
31. 10.1063/1.10569310.1063/1.105693 ↗
32. 10.1063/1.10569910.1063/1.105699 ↗
33. 10.1063/1.9442010.1063/1.94420 ↗
34. 10.1063/1.10348610.1063/1.103486 ↗
35. 10.1016/0038-1098(74)90840-010.1016/0038-1098(74)90840-0 ↗
36. 10.1063/1.9456610.1063/1.94566 ↗
37. 10.1063/1.33293710.1063/1.332937 ↗
38. 10.1063/1.33911010.1063/1.339110 ↗
39. 10.1063/1.33232310.1063/1.332323 ↗
40. 10.1143/JJAP.30.L199310.1143/JJAP.30.L1993 ↗
41. 10.1063/1.9776110.1063/1.97761 ↗
42. 10.1063/1.9867010.1063/1.98670 ↗
43. 10.1109/23.4537810.1109/23.45378 ↗
44. 10.1063/1.9919210.1063/1.99192 ↗
45. 10.1063/1.10569910.1063/1.105699 ↗
46. 10.1063/1.165529710.1063/1.1655297 ↗
47. 10.1063/1.165511210.1063/1.1655112 ↗
48. 10.1016/0039-6028(80)90442-210.1016/0039-6028(80)90442-2 ↗
49. 10.1063/1.33132010.1063/1.331320 ↗
50. 10.1063/1.9007710.1063/1.90077 ↗
51. Krivanek, O. L., Tsui, D. C., Sheng, T. T. and Kamgar, A. 1978.The Physics of SiO2and Its Interfaces, Edited by: Pantelides, S. T. 356New York: Pergamon.10.1016/B978-0-08-023049-8.50066-X ↗
52. 10.1016/0039-6028(80)90487-210.1016/0039-6028(80)90487-2 ↗
53. Mazur, J. J. and Washburn, J. AIP Conf Proc. No. 122, Proc. Int. Conf on the Physics of VLSI. Edited by: Palo Alto and Knights, J. C. pp.52New York: American Institute of Physics.
54. Goodnick S. M. · Phys. Rev. · 1985 · 32 · 817110.1103/PhysRevB.32.8171 ↗
55. 10.1063/1.33695910.1063/1.336959 ↗
56. Akatsu H. · Phys. Rev. · 1991 · 44 · 161610.1103/PhysRevB.44.1616 ↗
57. 10.1063/1.9454710.1063/1.94547 ↗
58. 10.1080/0001873860010189110.1080/00018738600101891 ↗
59. Rochet F. · Solid-state Electron., Suppl. · 1990 · 33 · 135
60. 10.1103/PhysRevLett.59.21310.1103/PhysRevLett.59.213 ↗
61. 10.1063/1.10055910.1063/1.100559 ↗
62. 10.1063/1.10441810.1063/1.104418 ↗
63. 10.1063/1.10228010.1063/1.102280 ↗
64. 10.1103/PhysRevLett.68.178210.1103/PhysRevLett.68.1782 ↗
65. Hahn P. O. · J. Vac. Sci. Technol. · 1984 · 2 · 57410.1116/1.572449 ↗
66. Henzler, M. 1987.Solid State Devices 1986, Inst. Phys. Conf. Ser., No. 82 39Bristol: Institute of Physics.
67. 10.1063/1.10733010.1063/1.107330 ↗
68. 10.1116/1.56877110.1116/1.568771 ↗
69. 10.1147/rd.223.029410.1147/rd.223.0294 ↗
70. 10.1103/PhysRevLett.43.168310.1103/PhysRevLett.43.1683 ↗
71. 10.1016/0039-6028(79)90142-010.1016/0039-6028(79)90142-0 ↗
72. 10.1063/1.9127810.1063/1.91278 ↗
73. 10.1063/1.9439210.1063/1.94392 ↗
74. 10.1143/JJAP.25.54410.1143/JJAP.25.544 ↗
75. 10.1063/1.33821510.1063/1.338215 ↗
76. 10.1016/0039-6028(88)90439-610.1016/0039-6028(88)90439-6 ↗
77. 10.1016/0039-6028(88)90199-910.1016/0039-6028(88)90199-9 ↗
78. 10.1016/0039-6028(89)90377-410.1016/0039-6028(89)90377-4 ↗
79. 10.1016/0378-5963(81)90126-410.1016/0378-5963(81)90126-4 ↗
80. Bauer R. S. · Proc. SPIE—Int. Soc. Opt. Engineers. · 1983 · 452 · 160
81. 10.1063/1.9456510.1063/1.94565 ↗
82. 10.1016/0039-6028(87)90049-510.1016/0039-6028(87)90049-5 ↗
83. Hecht M. H. · J. Vac. Sci. Technol. · 1984 · 2 · 58410.1116/1.572450 ↗
84. Hollinger G. · Philos. Mag. · 1987 · 55 · 73510.1080/13642818708218377 ↗
85. Himpsel F. J. · Phys. Rev. · 1988 · 38 · 608410.1103/PhysRevB.38.6084 ↗
86. 10.1143/JJAP.27.L139810.1143/JJAP.27.L1398 ↗
87. 10.1143/JJAP.27.L221310.1143/JJAP.27.L2213 ↗
88. 10.1016/0169-4332(89)90094-910.1016/0169-4332(89)90094-9 ↗
89. 10.1143/JJAP.28.L29610.1143/JJAP.28.L296 ↗
90. Lutz F. · Phys. Rev. · 1989 · 40 · 1035610.1103/PhysRevB.40.10356 ↗
91. Lutz F. · Phys. Rev. · 1989 · 40 · 1174710.1103/PhysRevB.40.11747 ↗
92. 10.1143/JJAP.29.L240110.1143/JJAP.29.L2401 ↗
93. 10.1016/0040-6090(91)90384-A10.1016/0040-6090(91)90384-A ↗
94. Niwano M. · J. Vac. Sci. Technol. · 1991 · 9 · 19510.1116/1.577520 ↗
95. 10.1016/0169-4332(92)90347-Z10.1016/0169-4332(92)90347-Z ↗
96. Ogawa H. · IEICE Trans. Electron. · 1992 · 75 · 757
97. 10.1063/1.10784210.1063/1.107842 ↗
98. 10.1103/PhysRevLett.71.244110.1103/PhysRevLett.71.2441 ↗
99. 10.1143/JJAP.33.L67510.1143/JJAP.33.L675 ↗
100. 10.1063/1.11210910.1063/1.112109 ↗