Electronic structure of silicon surfaces: Clean and with ordered overlayers

Abstract Recent photoemission results on the electronic structure of clean, reconstructed Si(111) and Si(100) surfaces are reviewed. Changes in the electronic and atomic structure induced by different overlayers (≥1 monolayer) are discussed based on the knowledge about the clean silicon surfaces. Emphasis is placed on overlayer systems with small surface unit cells that have been studied both experimentally and theoretically. Overlayer systems that are discussed include surfaces passivated with As, H, or Cl. Concerning metal overlayers, the focus is on group-I11 metals and the catalytically active alkali metals.