Spectroscopic Signatures of the Alloy-Alloy Interface in InGaAs-GaAs(001) Stepped Quantum Wells: a Frequency- and Time-Resolved Study
Source abstract
Abstract
Stepped quantum wells of InGaAs–GaAs(001) have been characterized by energy- and time-resolved (ultrafast) optical spectroscopies. The energy-resolved reflectivity spectra are in good agreement with our theoretical predictions while energy- and time-resolved photoluminescence measurements show a rather different behavior with respect to what we observe for symmetric quantum wells of similar structural characteristics and growth history. The data suggest that potential alloy fluctuations at the InGaAs–GaAs induce exciton localization.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices · Advanced Semiconductor Detectors and Materials · Semiconductor Lasers and Optical Devices
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