Impact of Thermal Annealing on the Interaction Between Monolayer MoS2 and Au
Source abstract
Abstract
Herein, the impact of thermal annealing on the interaction between monolayer MoS2 and Au using Raman spectroscopy is investigated. It is found that MoS2 has two main modes of interactions with the underlying Au being either weakly coupled or strongly coupled. The regions strongly coupled to Au are hybridized to Au, minimally strained, and electron doped. The weakly coupled regions are found to be slightly hole doped with tensile strain of 1.0%. The overall areal coverage of the strongly coupled regions is not increased by thermal annealing, and the variability in the degree of hybridization increases at annealing temperatures above 100 °C. The data also show that monolayer MoS2 starts to decouple from Au around 100 °C, becoming fully decoupled above 200–250 °C, suggesting that monolayer MoS2 produced by Au‐assisted mechanical exfoliation may be more easily transferred off Au at elevated temperatures.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: 2D Materials and Applications · MXene and MAX Phase Materials · Nanowire Synthesis and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Physics and NanoScience Technology Center University of Central Florida Orlando FL 32816 USA
Materials and Manufacturing Directorate Air Force Research Laboratory Wright Patterson Air Force Base Dayton OH 45433 USA
Funding
Air Force Office of Scientific Research
References (34)
Show source-provided references
1. 10.1002/adma.20210979610.1002/adma.202109796 ↗
2. 10.1021/acs.nanolett.7b0133710.1021/acs.nanolett.7b01337 ↗
3. 10.1016/j.sse.2009.09.01710.1016/j.sse.2009.09.017 ↗
4. A. S.Chou T.Wu C.‐C.Cheng S.‐S.Zhan I‐C.Ni S.‐Y.Wang Y.‐C.Chang S.‐L.Liew E.Chen W.‐H.Chang C.‐IWu J.Cai H.‐S.Philip Wong H.Wang 2021 IEEE International Electron Devices Meeting (IEDM) IEEE New York City2021 https://doi.org/10.1109/Iedm19574.2021.9720608.10.1109/IEDM19574.2021.9720608 ↗
5. K. P.O’Brien C. J.Dorow A.Penumatcha K.Maxey S.Lee C. H.Naylor A.Hsiao B.Holybee C.Rogan D.Adams T.Tronic S.Ma A.Oni A.Sen Gupta R.Bristol S.Clendenning M.Metz U.Avci 2021 IEEE International Electron Devices Meeting (IEDM) IEEE New York City2021 https://doi.org/10.1109/Iedm19574.2021.9720651.10.1109/IEDM19574.2021.9720651 ↗
6. 10.3390/nano1220354810.3390/nano12203548 ↗
7. 10.1038/s41598-023-30317-410.1038/s41598-023-30317-4 ↗
8. 10.1038/s41586-022-05134-w10.1038/s41586-022-05134-w ↗
9. 10.1038/s42254-021-00389-010.1038/s42254-021-00389-0 ↗
10. 10.1021/acsnano.0c0351510.1021/acsnano.0c03515 ↗
11. 10.1038/s41586-019-1052-310.1038/s41586-019-1052-3 ↗
12. 10.1038/s41586-018-0129-810.1038/s41586-018-0129-8 ↗
13. 10.1002/adma.20150617110.1002/adma.201506171 ↗
14. 10.1021/acsnano.8b0610110.1021/acsnano.8b06101 ↗
15. 10.1021/acs.jpclett.0c0128710.1021/acs.jpclett.0c01287 ↗
16. 10.1021/acsomega.1c0157010.1021/acsomega.1c01570 ↗
17. 10.1109/JMEMS.2006.87223310.1109/JMEMS.2006.872233 ↗
18. 10.1039/c3nr02567e10.1039/c3nr02567e ↗
19. 10.1021/acsnano.0c0601410.1021/acsnano.0c06014 ↗
20. 10.1103/PhysRevB.85.16140310.1103/PhysRevB.85.161403 ↗
21. 10.1063/1.494835710.1063/1.4948357 ↗
22. 10.1103/PhysRevB.99.19540110.1103/PhysRevB.99.195401 ↗
23. Lee J.‐U. · 2D Mater. · 2015 · 2 · 6100
24. 10.1021/jp402509w10.1021/jp402509w ↗
25. 10.1021/nn405826k10.1021/nn405826k ↗
26. 10.1088/2053-1583/ab6d3410.1088/2053-1583/ab6d34 ↗
27. 10.1038/s41598-022-22913-710.1038/s41598-022-22913-7 ↗
28. 10.1116/1.58051810.1116/1.580518 ↗
29. 10.1186/1556-276X-8-24910.1186/1556-276X-8-249 ↗
30. 10.1016/j.actamat.2014.09.04910.1016/j.actamat.2014.09.049 ↗
31. Syed M. · J. Mater. Sci. Eng. B · 2018 · 8 · 66
32. 10.1021/acs.jpcc.0c0781310.1021/acs.jpcc.0c07813 ↗
33. 10.1063/1.32353910.1063/1.323539 ↗
34. 10.1021/acsnano.6b0174210.1021/acsnano.6b01742 ↗