journal article·2017-10Open access

Infiltration of Cellular Silicon by Molten Magnesium Alloys

Alexander Martin Matz, Bettina Stefanie Mocker, Johann Heimann, Norbert Jost

Advanced Engineering Materials· Volume 19· Issue 10

Abstract

Open‐pore cellular Si structures are manufactured by investment casting and, subsequently, infiltrated with molten Mg(‐Sn), representing the initial state for a formation of the intermetallic compound Mg2Si1–xSnx. The processing parameters which govern the evolution of microstructure after the infiltration process are studied in the alloy systems Mg‐Si and Mg‐Si‐Sn. The resulting microstructures are analyzed using SEM and EDS. It is found that an initial diffusion layer is already formed after infiltration. Its thickness can slightly be increased by raising the infiltration temperature of the Mg(‐Sn) melt. A variation in mold temperature does not show a noticeable impact. The comparison of the diffusion layer formed in the systems Mg‐Si and Mg‐Si‐Sn showed that a lower Sn content resulted in thicker layers.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: Aluminum Alloys Composites Properties · Aluminum Alloy Microstructure Properties · Semiconductor materials and interfaces

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Institute for Materials and Material Technologies, Laboratory for Materials Science Pforzheim University of Applied Sciences Tiefenbronner Str. 65 D‐75175 Pforzheim Germany

References (38)

Show source-provided references
1. 10.1126/science.115889910.1126/science.1158899 ↗
2. 10.1016/j.pmatsci.2016.07.00210.1016/j.pmatsci.2016.07.002 ↗
3. 10.1557/mrs.2015.17310.1557/mrs.2015.173 ↗
4. 10.1016/j.rser.2016.07.03410.1016/j.rser.2016.07.034 ↗
5. 10.1002/adem.20150033310.1002/adem.201500333 ↗
6. 10.1021/jp030252x10.1021/jp030252x ↗
7. 10.1016/j.rser.2014.05.06010.1016/j.rser.2014.05.060 ↗
8. 10.1016/j.scriptamat.2013.07.00810.1016/j.scriptamat.2013.07.008 ↗
9. 10.1016/j.actamat.2014.04.06010.1016/j.actamat.2014.04.060 ↗
10. 10.1103/PhysRevLett.108.16660110.1103/PhysRevLett.108.166601 ↗
11. 10.1103/PhysRevB.74.04520710.1103/PhysRevB.74.045207 ↗
12. 10.1039/c1jm00025j10.1039/c1jm00025j ↗
13. 10.1016/j.renene.2011.09.03010.1016/j.renene.2011.09.030 ↗
14. 10.1016/j.msea.2007.01.03810.1016/j.msea.2007.01.038 ↗
15. 10.1016/j.jallcom.2013.10.11510.1016/j.jallcom.2013.10.115 ↗
16. 10.1016/j.jpcs.2012.10.00510.1016/j.jpcs.2012.10.005 ↗
17. 10.1063/1.364296510.1063/1.3642965 ↗
18. 10.1155/2008/80728710.1155/2008/807287 ↗
19. 10.1007/s11664-012-2442-610.1007/s11664-012-2442-6 ↗
20. 10.1016/j.apsusc.2013.08.07010.1016/j.apsusc.2013.08.070 ↗
21. 10.1016/j.cap.2011.03.01710.1016/j.cap.2011.03.017 ↗
22. 10.1016/j.mseb.2006.09.01110.1016/j.mseb.2006.09.011 ↗
23. 10.1111/ijac.1252210.1111/ijac.12522 ↗
24. 10.1039/c1jm10827a10.1039/c1jm10827a ↗
25. 10.2320/matertrans.44.98110.2320/matertrans.44.981 ↗
26. 10.2320/matertrans.46.149010.2320/matertrans.46.1490 ↗
27. 10.1021/cm901956r10.1021/cm901956r ↗
28. 10.1016/j.intermet.2012.08.02910.1016/j.intermet.2012.08.029 ↗
29. 10.1016/j.vacuum.2009.06.05510.1016/j.vacuum.2009.06.055 ↗
30. 10.1155/2014/42172910.1155/2014/421729 ↗
31. 10.1007/BF0035786110.1007/BF00357861 ↗
32. 10.7567/JJAP.54.07JB0610.7567/JJAP.54.07JB06 ↗
33. 10.7567/JJAP.54.08550310.7567/JJAP.54.085503 ↗
34. 10.1063/1.476487210.1063/1.4764872 ↗
35. Raynor G. V. · J. Inst. Met · 1940 · 6 · 403
36. 10.1002/pssc.20130035810.1002/pssc.201300358 ↗
37. 10.1016/j.tsf.2005.07.33110.1016/j.tsf.2005.07.331 ↗
38. 10.1016/j.jallcom.2015.07.29110.1016/j.jallcom.2015.07.291 ↗