High Kinetic Inductance in Platinum‐Coated Aluminum Nanobridge Interferometers
Source abstract
Abstract
The transport properties of a nanobridge superconducting quantum interference device made of Al/Pt bilayer have been studied. Measurement and approximation of the voltage‐field dependencies allow to estimate the inductance of the structure. It is found that this value significantly exceeds the expected geometric inductance and exhibits an atypical temperature dependence. To explain this effect, a microscopic model of electron transport in SN bilayers is developed, considering the proximity effect, and the available regimes of the current distribution are described. The measured properties may be indicative of the formation of high‐resistance aluminum with high values of kinetic inductance during the fabrication of Al/Pt bilayers.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Quantum and electron transport phenomena · Advancements in Semiconductor Devices and Circuit Design · Surface and Thin Film Phenomena
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Superconducting Quantum Computing Lab Quantum Center Skolkovo 143025 Moscow Region Russia
Moscow Institute of Physics and Technology 141700 Dolgoprudny Russia
Skobeltsyn Institute of Nuclear Physics Moscow State University Leninskie gory, GSP‐1 119991 Moscow Russia
Faculty of Physics Moscow State University 119991 Moscow Russia
Skolkovo Institute of Science and Technology Bolshoy boul., 30 121205 Moscow Russia
Laboratoire de Physique et d’Etude des Matériaux ESPCI Paris PSL Research University CNRS Sorbonne University 75005 Paris France
Funding
Russian Science Foundation · Ministry of Science and Higher Education
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