Effect of Oxygen Impurity on Thermal Conduction Rate of Polycrystalline Si3N4
Source abstract
Abstract
Heat transfer with homogeneous structures of Si3N4 system and the effects of oxygen defects in the Si3N4 grains are reported by Jung Woo Lee and co-workers in article number 2100566. The oxygen defects in the grains are moving to the surface of the grains and effectively captured by oxygen getter. The inhibition of the Si3N4 grain oxidization improves a spontaneous dissipation of thermal energy.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced ceramic materials synthesis · Thermal properties of materials · Diamond and Carbon-based Materials Research
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Affiliations
Convergence R&D Division Korea Institute of Ceramic Engineering and Technology 101, Soho-ro Jinju-si Gyeongsangnam-do 52851 Republic of Korea
Power Apparatus Research Division Korea Electrotechnology Research Institute 12, Jeongiui-gil, Seongsan-gu Changwon-si Gyeongsangnam-do 51543 Republic of Korea
Department of Materials Science and Engineering Pusan National University 2, Busandaehak-ro 63 beon-gil, Geumjeong-gu Busan 46241 Republic of Korea
References
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