journal article·2008-03

A New Oxidation Protection Strategy for Silicon Carbide Foams

H.‐P. Martin, G. Standke, J. Adler

Advanced Engineering Materials· Volume 10· Issue 3
Publisher page

Abstract

This paper describes the manufacture of an oxidation protection layer for reticulated silicon carbide foams. The produced foams are investigated by light microscopy, XRD and electrical measurements. The protection efficiency is estimated by weight change, image analysis and electrical resistance. The results indicate a feasible way to protect SiC foams against oxidation.
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Research context

OpenAlex topics: Silicon Carbide Semiconductor Technologies · Advanced ceramic materials synthesis · Semiconductor materials and devices

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