Enhancing Chemical Stability of Pt Ultrathin Films on Substrates by Controlled Intermixing of Pt‐Zn at Interface
Source abstract
Abstract
Platinum (Pt) ultrathin films supported on substrates can enable reduced metal loading, but their long‐term stability in harsh environments remains a challenge. This work establishes that an optimal thickness of the intermediate adhesion layer can provide this stability. Pt ultrathin films (20 nm) are deposited on Silicon substrates using a Zinc (Zn:4, 6 nm) adhesion layer in a DC magnetron sputtering system. Results show that the addition of the Zn layer nearly doubled the adhesion strength of Pt films, from 420 to 780 μN. A maximum of 4 nm Zn leads to longevity of Pt films in 1 m H2SO4 environments with negligible variation in sheet resistance (15–20 Ω sq−1) for over 4 months. Films with 6 nm Zn deteriorated within 2 weeks. Observed adhesion and stability are due to limited (for 4 nm) and complete intermixing (for 6 nm) of Zn and Pt, resulting in the formation of Pt‐Zn solid solution. Solid solution formation is validated by X‐ray photoemission spectroscopy, X‐ray diffraction, and density functional theory. This study opens up the possibility of using engineered adhesion layers to enhance the durability of ultrathin metal films for a wide range of industrial applications.
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Research context
OpenAlex topics: Semiconductor materials and devices · Copper Interconnects and Reliability · Electrocatalysts for Energy Conversion
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Materials Design Group Department of Metallurgical and Materials Engineering Indian Institute of Technology (IIT) Madras Chennai 600036 India
Electronic Materials and Thin Films Lab Department of Metallurgical and Materials Engineering Indian Institute of Technology (IIT) Madras Chennai 600036 India
Center for Atomistic Modelling and Materials Design Indian Institute of Technology (IIT) Madras Chennai 600036 India
References (46)
Show source-provided references
1. 10.3390/ma1307179610.3390/ma13071796 ↗
2. 10.3390/nano1301009410.3390/nano13010094 ↗
3. 10.1021/acsami.3c1606510.1021/acsami.3c16065 ↗
4. 10.1016/j.envpol.2019.11347710.1016/j.envpol.2019.113477 ↗
5. 10.1021/jacsau.3c0027710.1021/jacsau.3c00277 ↗
6. 10.1016/j.surfcoat.2015.01.03710.1016/j.surfcoat.2015.01.037 ↗
7. 10.1039/D3CY00996C10.1039/D3CY00996C ↗
8. 10.1016/j.vacuum.2024.11329510.1016/j.vacuum.2024.113295 ↗
9. 10.1021/acsami.8b2105410.1021/acsami.8b21054 ↗
10. 10.1557/s43578-020-00084-310.1557/s43578-020-00084-3 ↗
11. 10.1016/S0925-4005(01)00756-010.1016/S0925-4005(01)00756-0 ↗
12. 10.1142/S0218625X1101440010.1142/S0218625X11014400 ↗
13. 10.1007/s00542-015-2715-010.1007/s00542-015-2715-0 ↗
14. 10.4161/biom.2882210.4161/biom.28822 ↗
15. 10.1557/JMR.2004.023210.1557/JMR.2004.0232 ↗
16. Ohring M. · Appl. Opt. · 1992 · 31 · 7162
17. A.Ashok P. K.Rana D.Jacob P.Lasya P.Muhammed Razi S. K.Yadav(Preprint) arXiv:2306.15575 v1 Submitted: Jun.2023.
18. Pt‐Zn Binary Phase Diagram 0‐100 at.% Zn; Pierre Villars PAULING FILE in Inorganic Solid Phases SpringerMaterials (online database) Springer Heidelberg (ed.) https://materials.springer.com/isp/phase‐diagram/docs/c_0905283.
19. 10.1007/s40995-021-01220-210.1007/s40995-021-01220-2 ↗
20. 10.1016/j.ijhydene.2020.03.21810.1016/j.ijhydene.2020.03.218 ↗
21. 10.1016/j.tsf.2014.07.03110.1016/j.tsf.2014.07.031 ↗
22. 10.1088/0960-1317/21/2/02502510.1088/0960-1317/21/2/025025 ↗
23. 10.1557/jmr.2018.15410.1557/jmr.2018.154 ↗
24. 10.1515/ntrev-2019-005510.1515/ntrev-2019-0055 ↗
25. 10.1007/s10854-017-7067-310.1007/s10854-017-7067-3 ↗
26. 10.1016/j.ceramint.2019.07.05310.1016/j.ceramint.2019.07.053 ↗
27. Garg R. · 2024 · 103203
28. 10.1016/j.mssp.2017.04.01910.1016/j.mssp.2017.04.019 ↗
29. 10.1016/j.matlet.2017.08.12110.1016/j.matlet.2017.08.121 ↗
30. 10.1016/j.ceramint.2019.04.24510.1016/j.ceramint.2019.04.245 ↗
31. 10.1016/j.ceramint.2018.07.11510.1016/j.ceramint.2018.07.115 ↗
32. 10.1016/j.apsusc.2016.05.09810.1016/j.apsusc.2016.05.098 ↗
33. 10.3390/electronics1008096010.3390/electronics10080960 ↗
34. 10.1016/j.polymer.2016.02.04210.1016/j.polymer.2016.02.042 ↗
35. 10.1557/jmr.2017.8510.1557/jmr.2017.85 ↗
36. 10.1103/PhysRevLett.77.386510.1103/PhysRevLett.77.3865 ↗
37. 10.1103/PhysRevB.50.1795310.1103/PhysRevB.50.17953 ↗
38. 10.1103/PhysRevB.47.55810.1103/PhysRevB.47.558 ↗
39. 10.1103/PhysRevB.54.1116910.1103/PhysRevB.54.11169 ↗
40. 10.1103/PhysRevB.13.518810.1103/PhysRevB.13.5188 ↗
41. 10.1016/S0364-5916(02)80006-210.1016/S0364-5916(02)80006-2 ↗
42. 10.1016/j.calphad.2013.06.00610.1016/j.calphad.2013.06.006 ↗
43. 10.1107/S002188981103897010.1107/S0021889811038970 ↗
44. Ababneh A. · 2013 · 491
45. 10.1016/j.tsf.2013.06.01210.1016/j.tsf.2013.06.012 ↗
46. 10.1016/j.snb.2013.02.05810.1016/j.snb.2013.02.058 ↗