Nitrocellulose‐Passivated SnO2 Thin Film as a Ultraviolet‐C Photodetector
Source abstract
Abstract
This study demonstrates the development of an ultraviolet (UV)‐C photodetector (PD) fabricated using a surface‐passivated SnO2 thin film deposited via spray pyrolysis. This PD possesses an unprecedentedly fast response speed, with both rise time and decay time of 0.3 ms. Furthermore, even when subjected to a modest UV light intensity of 6 μW cm−2, the device shows a significantly high responsivity of 1500 A W−1, external quantum efficiency of 7 × 105%, and detectivity of 1013 Jones. When compared to previously reported SnO2‐based PDs, this device exhibits consistent performance over a long working time, which may be due to the suppression of surface vacancy defects via surface passivation, as observed from structural and optical measurements. This type of PDs has the potential to be useful in wide range of applications, including industrial sensing, medical diagnostics, and environmental monitoring.
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Research context
OpenAlex topics: Gas Sensing Nanomaterials and Sensors · ZnO doping and properties · Ga2O3 and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Thin film and Device Laboratory School of Physical Sciences Swami Ramanand Teerth Marathwada University Nanded 431606 India
Department of Physics Shri Datta Arts, Commerce and Science College Hadgaon Tq. District Nanded Hadgaon 431712 India
RUSA Centre for Advanced Sensor Technology Dr. Babasaheb Ambedkar Marathwada University Aurangabad 431004 India
Department of Physics N.E.S. Science College Nanded 431602 India
Department of Physics College of Engineering Pune Pune 411005 India
Department of Physics School of Basic and Applied Sciences Central University of Punjab Bhatinda 151001 India
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