Laser‐Associated Selective Metallization of Ceramic Surface with Infrared Nanosecond Laser Technology

A new approach for the metallization of ceramic substrate by Infrared Nanosecond Laser Technology (INLT) is developed in the present work. The activation of ceramic surface by INLT with a wavelength of 1064 nm promotes the chemical electroless copper plating. The laser associated modification of ceramics in terms of laser ablation is also determined. The ablation threshold for the Al₂O₃‐Cu₂O ceramic used in this study is identified at 3.82 and 1.86 J cm⁻² with respect to single pulse irradiation and multiple pulses irradiation, respectively. The thickness of plated copper layer on the activated ceramic surface is strongly dependent on the laser fluence and can reach the maximum thickness at the fluence nearby the ablation threshold.