Substrate Independent Elastic Modulus of Thin Low Dielectric Constant Materials
Source abstract
Abstract
The elastic modulus of a variety of porous low dielectric constant thin films with porosities in the range of 24–47% and thicknesses between 148 and 235 nm is calculated using the Oliver–Pharr method, an intrinsic thin film model based on the Li‐Vlassak method, and finite element simulations in the elastic regime by taking the tip imperfections into account. It is shown that the substrate effects are significant even at shallow indentation depths and strongly depend on the nanoindenter geometry. Elastic modulus values extracted from the intrinsic thin film model and finite element simulations, although based on different approaches, are found to be very similar and independent of the nanoindenter geometry.
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Research context
OpenAlex topics: Metal and Thin Film Mechanics · Copper Interconnects and Reliability · Advanced Surface Polishing Techniques
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Materials Engineering KU Leuven B‐3000 Leuven Belgium
imec Kapeldreef 75, B‐3001 Leuven Belgium
Hysitron Inc. Dennewartstrasse 25, 52068 Aachen Germany
Hysitron Inc. Minneapolis Minnesota USA
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