ZnSe‐Based Longitudinal Twinning Nanowires
Source abstract
Abstract
Zinc blende ZnSe longitudinal twinning nanowires and a sandwich structure with the wurtzite ZnSe inserting into the zinc blende ZnSe longitudinal twinning nanowires are fabricated via a simple thermal evaporation method. The high‐resolution transmission electron microscope images of the two types of nanowires match well with simulated atomic models of them. The growth of them might be caused by the crystal plane slip during the phase transformation process between the wurtzite and the zinc blende ZnSe nanowire. The vibrating and luminescence properties of the as‐grown longitudinal twinning nanowire are investigated by room‐temperature Raman and low‐temperature (10 K) photoluminescence spectroscopy, respectively. The electrical transport properties of the two types of longitudinal twinning ZnSe nanowires and the monocrystal ZnSe nanowires were compared using in situ measurement in transmission electron microscope.
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Research context
OpenAlex topics: Nanowire Synthesis and Applications · Quantum Dots Synthesis And Properties · Chalcogenide Semiconductor Thin Films
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Applied Physics and State Key Laboratory for Modification of Chemical Fibers and Polymer Materials Donghua University 2999 Renmin Rd. North Songjiang District Shanghai 201620 P.R. China
Key Laboratory of MEMS of Ministry of Education and School of Electronic Science and Engineering Southeast University Si‐Pai‐Lou 2 Nangjing 210096 P.R. China
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Science Shanghai 200083 P.R. China
Department of Physics and Astronomy Seoul National University 599 Gwanak‐ro Gwanak‐gu Seoul 151‐747 Korea
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