A Single‐Chamber System of Initiated Chemical Vapor Deposition and Atomic Layer Deposition for Fabrication of Organic/Inorganic Multilayer Films
Source abstract
Abstract
A single‐chamber system capable of depositing both organic and inorganic layers by initiated chemical vapor deposition (iCVD) and atomic layer deposition (ALD) is demonstrated to facilitate the fabrication of organic/inorganic hybrid thin film encapsulation (TFE). The chamber geometry and the process conditions of iCVD and ALD are similar to each other, which enabled the design of the single‐chamber system. Both organic and inorganic films deposited via the single‐chamber system produces films with their properties equivalent to those deposited in separate iCVD and ALD reactors. Alternating the deposition mode between iCVD and ALD produces organic/inorganic multilayers with outstanding barrier properties as well as optical transparency mechanical flexibility.
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Research context
OpenAlex topics: Semiconductor materials and devices · Copper Interconnects and Reliability · Organic Light-Emitting Diodes Research
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Chemical & Biomolecular Engineering Korea Advanced Institute of Science and Technology 291 Daehak‐ro Yuseong‐gu, Daejeon, 34141 Korea
Flexible Information Device Research Section Electronics and Telecommunications Research Institute 218 Gajeong‐ro Yuseong‐gu, Daejeon, 34129 Korea
Smart I/O Platform Research Department Electronics and Telecommunications Research Institute 218 Gajeong‐ro Yuseong‐gu, Daejeon, 34129 Korea
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