DataVXAdvanced Engineering MaterialsPaper
journal article·2009-04

New Materials in Memory Development Sub 50 nm: Trends in Flash and DRAM

Karl Heinz Kuesters, Marc Florian Beug, Uwe Schroeder, Nicolas Nagel, Ulrike Bewersdorff, Gerald Dallmann, Stefan Jakschik, Roman Knoefler, Stephan Kudelka, Christoph Ludwig, Dirk Manger, Wolfgang Mueller, Armin Tilke

Advanced Engineering Materials· Volume 11· Issue 4
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Source abstract

Abstract

Abstract New materials are of key importance for scaling memories in the sub 50 nm generations. Currently high‐k materials and metal gates are investigated for usage in Flash and DRAM memory. However, the requirements in the applications are different, leading to different material combinations. This paper gives an overview on new materials with focus on memory applications.
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Research context

OpenAlex topics: Semiconductor materials and devices · Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices

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