journal article·2025-12Open access

Microstructure and Performances of TiN Coatings Deposited by High Power Impulse Magnetron Sputtering

Cunli Mu, Xiaolong Lu, Junying Hao, Qiang Wang

Advanced Engineering Materials· Volume 27· Issue 23

Abstract

TiN coatings deposited via high power impulse magnetron sputtering technology exhibit a dense microstructure, high hardness, and adhesion strength, enhancing the longevity of engineering components. This study systematically investigates the influence of N 2 flow rate on the microstructure and mechanical properties of TiN coatings while maintaining a fixed Ar flow rate of 60 sccm and a substrate bias of −120 V. Results indicate that as the N 2 flow rate increases, the surface morphology transitions from irregular shapes to pyramidal and eventually to tetrahedral shapes, while the cross‐sectional structure remains dense. The preferred orientation shifts from TiN (111) to TiN (200) with N 2 flow rate increasing. Notably, the coatings achieve peak hardness (about 28.2 GPa) and elastic modulus (about 269.8 GPa) at an N 2 flow rate of 25 sccm, alongside maximum compressive residual stress (about 5.09 GPa). Adhesion strength ranges from 47.6 to 61.2 N, demonstrating superior adhesion to the substrate. This research provides a theoretical for future investigations into the application of TiN coatings in various industrial contexts, highlighting their exceptional mechanical properties and potential for improved performance.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: Metal and Thin Film Mechanics · Laser and Thermal Forming Techniques · Surface Treatment and Residual Stress

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

State Key Laboratory of Solid Lubrication Lanzhou Institute of Chemical Physics Chinese Academy of Sciences Lanzhou 730000 China

College of Chemistry and Pharmaceutical Sciences Qingdao Agricultural University Qingdao 266109 China

Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 China

Qingdao Center of Resource Chemistry and New Materials Qingdao 266000 China

Funding

Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences

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