Ultrafast Photonic Soldering with Sn–58Bi Using Intense Pulsed Light Energy
Source abstract
Abstract
Solders, which are the most commonly used materials in electronic packaging, have been widely used for electrical interconnections. When producing a solder joint, a layer is formed on the contact pad, followed by a reflow process conducted using infrared or thermal energy. This process requires a high‐temperature environment and long heating time. Herein, an advanced approach involving photonic soldering using intense pulsed light (IPL) energy is examined thoroughly. In particular, the relation between the bonding characteristics and pulse conditions, such as the energy, frequency, and number, for the development of ultrafast, low‐damage, and large‐area bonding technology is studied. Compared with the conventional reflow, IPL soldering requires a process time of only ≈2.5% and can improve the strength by 40%. Fracture micrographs after the die shear test indicate an interfacial fracture after conventional reflow and a mixed fracture after IPL soldering; this results in the consumption of the Cu layer after the time‐consuming reaction in the reflow and the formation of an extremely refined region in the solder joint after irradiation with IPL energy. Because of its improvement with respect to the process and bonding characteristics, IPL soldering can be a candidate for innovative interconnections in microelectronics.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Electronic Packaging and Soldering Technologies · 3D IC and TSV technologies · Laser Material Processing Techniques
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Advanced Materials Science & Engineering Sungkyunkwan University 2066, Seobu-ro, Jangan-gu, Suwon-si Gyeonggi-do 16419 Republic of Korea
Funding
Ministry of Education · Ministry of Trade, Industry and Energy
References (16)
Show source-provided references
1. 10.1021/acsami.5b0213410.1021/acsami.5b02134 ↗
2. Kim S. H. · ACS Appl. Mater. Interfaces · 2019 · 11 · 1090
3. H.Jiang H.Zhou S.Robertson Z.Zhou L.Zhao C.Liu inProc. 2019 IEEE 69th Electronic Components and Technology Conf. (ECTC) IEEE Piscataway NJ2019.
4. 10.1007/s10854-019-01648-810.1007/s10854-019-01648-8 ↗
5. B.Sirbu Y.Eichhammer H.Oppermann T.Tekin X.Yin J.Bauwelinck inProc. 2019 IEEE 69th Electronic Components and Technology Conf. (ECTC) IEEE Piscataway NJ2019.
6. 10.1109/TCAPT.2006.88047810.1109/TCAPT.2006.880478 ↗
7. K. M. B.Jansen L.Wang D. G.Yang C.van'tHof L. J.Ernst H. J. L.Bressers G. Q.Zhang in2004 Proc. 54th Electronic Components and Technology Conf. IEEE Las Vegas Nevada2004.
8. I.Hsu C. Y.Chen S.Lin T. J.Yu N.Cho M. C.Hsieh inProc. 2019 IEEE 69th Electronic Components and Technology Conf. (ECTC) IEEE Piscataway NJ2019.
9. A.Kolbasow T.Kubsch M.Fettke G.Friedrich T.Teutsch inProc. 2019 IEEE 69th Electronic Components and Technology Conf. (ECTC) IEEE Piscataway NJ2019.
10. 10.1016/j.mee.2008.12.05810.1016/j.mee.2008.12.058 ↗
11. 10.1038/srep1484510.1038/srep14845 ↗
12. 10.1021/acsami.7b0495610.1021/acsami.7b04956 ↗
13. S. K.Pakazad M.Barink G.Arutinov R.Hendriks R.Kuster M.Cauwe J. V.Brand inProc. 2016 6th Electronic System-Integration Technology Conf. (ESTC) IEEE Piscataway NJ2016.
14. Ende D. A. V. D. · IEEE Trans. Adv. Packag. · 2014 · 4 · 11
15. Xiaowu H. · China Foundry · 2012 · 9 · 4
16. 10.1016/j.jallcom.2009.11.01710.1016/j.jallcom.2009.11.017 ↗