Nonvolatile Memory Concepts Based on Resistive Switching in Inorganic Materials
Source abstract
Abstract
Abstract Solid state memories play an important role for the electronic systems used in today's information society. The classical approach of charge storage is expected to reach its physical scaling limits very soon. New storage effects are therefore receiving significant interest from industry and academia. In the paper we summarize recent results on resistive switching effects in inorganic materials obtained in the research groups of the authors. We discuss the implications of these results for the suitability of the investigated material systems as well as for the direction of further research.
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Research context
OpenAlex topics: Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices · Electronic and Structural Properties of Oxides
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References (28)
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