Mechanistic Understanding of Additive Reductive Degradation and SEI Formation in High‐Voltage NMC811||SiOx‐Containing Cells via Operando ATR‐FTIR Spectroscopy (Adv. Energy Mater. 5/2024)
Source abstract
Abstract
Additive Reductive Degradation In article number 2303568, Masoud Baghernejad and co-workers present an increased electrochemical performance of AG+20% SiOx anodes in high-voltage NMC811 cells by utilizing 2-sulfobenzoic acid anhydride as solid-electrolyte interphase (SEI) forming additive. The resulting SEI structure and composition are characterized and depth-resolved by operando ATR-FTIR spectroscopy, which leads to the postulation of a reductive degradation mechanism of the additive on silicon.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Semiconductor materials and devices · Silicon and Solar Cell Technologies · Semiconductor materials and interfaces
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Affiliations
Helmholtz‐Institute Münster IEK‐12 Forschungszentrum Jülich GmbH Corrensstrasse 46 48149 Münster Germany
Meet Battery Research Center Münster University of Münster Corrensstrasse 46 48149 Münster Germany
References
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