Solar Cells: A Temporary Barrier Effect of the Alloy Layer During Selenization: Tailoring the Thickness of MoSe2 for Efficient Cu2ZnSnSe4 Solar Cells (Adv. Energy Mater. 9/2015)
Source abstract
Abstract
In article number 1402178, Yi Zhang, Yun Sun, and co-workers present a simple method to tailor the formation of the MoSe2 interface in Cu2ZnSnSe4 (CZTSe) thin film solar cells without an additional barrier. The ohm contact between the absorber layer and back contact is realized by the controlling thickness of the MoSe2 interface. The results make it possible to create an excellent current collection process from the CZTSe absorber to the Mo back contact.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films
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Affiliations
Institute of Photoelectronic Thin Film Devices and Technology Nankai University Tianjin 300071 P.R. China
Department of Physics Sogang University Seoul 121–742 Korea
The MOE Key Laboratory of Weak‐Light Nonlinear Photonics School of Physics Nankai University Tianjin 300071 P.R. China
References
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