journal article·2022-05

Exceptionally Heavy Doping Boosts the Performance of Iron Silicide for Refractory Thermoelectrics

Pengfei Qiu, Jun Cheng, Jun Chai, Xiaolong Du, Xugui Xia, Chen Ming, Chenxi Zhu, Jiong Yang, Yi‐Yang Sun, Fangfang Xu, Xun Shi, Lidong Chen

Advanced Energy Materials· Volume 12· Issue 18
Publisher page

Abstract

Abstract Thermoelectric (TE) power generation is expected to be one of the most effective solutions to convert industrial exhaust heat to electricity for conserving fossil energy and reducing carbon emissions. However, its real application is obstructed decisively by the weakness of the service stability of state‐of‐the‐art TE materials at high temperatures in air. Refractory iron silicide (β‐FeSi2) used to be widely investigated as TE materials, but the low zT has restricted its practical application and even made it almost vanish from TE research in recent years. Here, guided by theoretical calculation, ultrahigh solubility of Ir on the Fe sites of β‐FeSi2 is successfully realized. Doping 16% Ir elicits multi‐valley electrical conduction and phonon‐electron scattering, doubling the previous zT record of β‐FeSi2 to ≈0.6 at 1000 K. The TE properties of the obtained β‐FeSi2 are practically unchanged after thermal aging in air at 1173 K. The new conceptual electrode‐less β‐FeSi2‐based refractory module demonstrates considerable power density and stable power generation when it is burned by a gas flame in air. These results mark a step toward developing practical TE power generation technology for the recovery of industrial waste heat.
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Research context

OpenAlex topics: Semiconductor materials and interfaces · Advanced Thermoelectric Materials and Devices · Chalcogenide Semiconductor Thin Films

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Chemistry and Materials Science Hangzhou Institute for Advanced Study University of Chinese Academy of Sciences Hangzhou Zhejiang 310024 China

State Key Laboratory of High Performance Ceramics and Superfine Microstructure Shanghai Institute of Ceramics Chinese Academy of Sciences Shanghai 200050 China

Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 China

Materials Genome Institute Shanghai University Shanghai 200444 China

Funding

National Key Research and Development Program of China · National Natural Science Foundation of China

References (50)

Show source-provided references
1. 10.1038/458138a10.1038/458138a ↗
2. 10.1126/science.184.4134.26410.1126/science.184.4134.264 ↗
3. Segal B. · 2002
4. Song Z. P. · Industrial Furnace · 2004 · 26 · 6
5. He J. · Science · 2017 · 357
6. 10.1126/science.aax779210.1126/science.aax7792 ↗
7. 10.1038/nenergy.2016.15310.1038/nenergy.2016.153 ↗
8. 10.1038/s41560-017-0071-210.1038/s41560-017-0071-2 ↗
9. 10.1021/acs.chemrev.6b0025510.1021/acs.chemrev.6b00255 ↗
10. 10.1038/nmat464310.1038/nmat4643 ↗
11. 10.1016/j.jallcom.2014.05.21510.1016/j.jallcom.2014.05.215 ↗
12. Flanders L. A. · Space Technology and Applications International Forum‐Staif 2005 · 2005 · 746 · 564
13. 10.1002/adfm.20160265210.1002/adfm.201602652 ↗
14. 10.1109/62.83962810.1109/62.839628 ↗
15. 10.1021/acsaem.9b0209310.1021/acsaem.9b02093 ↗
16. 10.1126/sciadv.aar560610.1126/sciadv.aar5606 ↗
17. 10.1126/science.aaa416610.1126/science.aaa4166 ↗
18. 10.1021/ja211185w10.1021/ja211185w ↗
19. 10.1038/nature2366710.1038/nature23667 ↗
20. 10.1039/C5TA04418A10.1039/C5TA04418A ↗
21. 10.1038/s41467-018-04958-310.1038/s41467-018-04958-3 ↗
22. 10.1039/D0EE00838A10.1039/D0EE00838A ↗
23. 10.1038/nmat327310.1038/nmat3273 ↗
24. 10.1039/C7EE01737E10.1039/C7EE01737E ↗
25. 10.1021/nl802679510.1021/nl8026795 ↗
26. 10.1063/1.302706010.1063/1.3027060 ↗
27. 10.1002/adem.20150033310.1002/adem.201500333 ↗
28. 10.1021/ic800644x10.1021/ic800644x ↗
29. 10.1021/acsami.0c0032110.1021/acsami.0c00321 ↗
30. 10.1021/acsami.9b1064810.1021/acsami.9b10648 ↗
31. 10.1039/C9CP00755E10.1039/C9CP00755E ↗
32. 10.1016/j.jallcom.2006.06.08010.1016/j.jallcom.2006.06.080 ↗
33. 10.1063/1.36817410.1063/1.368174 ↗
34. 10.2109/jcersj.109.1270_55710.2109/jcersj.109.1270_557 ↗
35. 10.1016/j.jallcom.2006.08.04510.1016/j.jallcom.2006.08.045 ↗
36. 10.1007/978-3-662-04569-510.1007/978-3-662-04569-5 ↗
37. 10.1063/1.132259710.1063/1.1322597 ↗
38. 10.1063/1.143630210.1063/1.1436302 ↗
39. Goldbeck O. · 1982 · 9410.1007/978-3-662-08024-5 ↗
40. 10.1063/1.178302210.1063/1.1783022 ↗
41. 10.1016/j.jmat.2016.05.00610.1016/j.jmat.2016.05.006 ↗
42. 10.1002/aelm.20160017110.1002/aelm.201600171 ↗
43. 10.1016/j.joule.2019.04.01010.1016/j.joule.2019.04.010 ↗
44. 10.1038/s41467-020-16508-x10.1038/s41467-020-16508-x ↗
45. 10.1016/0927-0256(96)00008-010.1016/0927-0256(96)00008-0 ↗
46. 10.1103/PhysRevB.59.175810.1103/PhysRevB.59.1758 ↗
47. 10.1103/PhysRevLett.77.386510.1103/PhysRevLett.77.3865 ↗
48. 10.1103/PhysRevLett.67.233910.1103/PhysRevLett.67.2339 ↗
49. Freysoldt C. · Rev. Mod. Phys. · 2014 · 86
50. 10.1016/j.cpc.2006.03.00710.1016/j.cpc.2006.03.007 ↗