journal article·2022-01Open access

Constructed Ge Quantum Dots and Sn Precipitate SiGeSn Hybrid Film with High Thermoelectric Performance at Low Temperature Region

Ying Peng, Lei Miao, Chengyan Liu, Haili Song, Masashi Kurosawa, Osamu Nakatsuka, Song Yi Back, Jong Soo Rhyee, Masayuki Murata, Sakae Tanemura, Takahiro Baba, Tetsuya Baba, Takahiro Ishizaki, Takao Mori

Advanced Energy Materials· Volume 12· Issue 2

Abstract

Abstract SiGe‐based thermoelectric (TE) materials are well‐known for high‐temperature utilization, but rarely relevant in the low temperature region. Here a Ge quantum dots (QDs) and Sn precipitation SiGeSn hybrid film are constructed via ultrafast high temperature annealing (UHA) of a treated P‐ion implantation SiGeSn film on Si/SiO2 substrate. Combining the modulation doping effect dominated by Sn precipitates and the energy filtering effect caused by Ge QDs, the optimized SiGe films achieve a giant power factor as high as 91 µW cm−1 K−2 @300 K, room temperature, while maintaining low thermal conductivity. This strategy on film construction provides a novel insight for TE materials with striking performance.
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Research context

OpenAlex topics: Advanced Thermoelectric Materials and Devices · Nanowire Synthesis and Applications · Chalcogenide Semiconductor Thin Films

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Guangxi Key Laboratory of Precision Navigation Technology and Application School of Information and Communication Guilin University of Electronic Technology Guilin 541004 China

Department of Materials Science and Engineering SIT Research Laboratories Innovative Global Program Faculty of Engineering Shibaura Institute of Technology Tokyo 135‐8548 Japan

Guangxi Key Laboratory of Information Material School of Material Science and Engineering Guilin University of Electronic Technology Guilin 541004 China

Key Laboratory of Bioinorganic and Synthetic Chemistry of Ministry of Education School of Chemistry Sun Yat‐Sen University Guangzhou Guangdong 510275 China

Department of Materials Physics Graduate School of Engineering Nagoya University Nagoya 464‐8603 Japan

Department of Applied Physics Integrated Education Institute for Frontier Science and Technology (BK21 Four) and Institute of Natural Sciences Kyung Hee University Yongin 17104 Korea

National Institute of Advanced Industrial Science and Technology (AIST) Tsukuba Ibaraki 305–8568 Japan

Japan Fine Ceramic Center 2‐4‐1 Mutsuno, Atsuta‐ku Nagoya 456–8587 Japan

International Center for Materials Nanoarchitectonics (WPI‐MANA) National Institute for Materials Science (NIMS) Namiki 1‐1 Tsukuba 305‐0044 Japan

Graduate School of Pure and Applied Sciences University of Tsukuba 1‐1‐1 Tennodai Tsukuba Ibaraki 305–8577 Japan

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