Boron Strengthened GeTe‐Based Alloys for Robust Thermoelectric Devices with High Output Power Density

Abstract High‐performance thermoelectric (TE) devices require not only a high figure of merit (ZT) but also mechanical strength and thermal stability. Here, a simultaneous enhancement of ZT as well as mechanical properties is obtained in GeTe‐based alloys by adding boron. This material is then assembled with n‐type CoSb₃ skutterudite into TE modules. The improved ZT values result from the increase in charge carrier mobility due to the reduced interfacial barrier height. A peak ZT of 2.2 at 773 K can be achieved in Ge_0.84Pb_0.1Sb_0.06TeB_0.07, which shows a negligible change in the coefficient of thermal expansion upon the phase transition from the rhombohedral to the cubic phase, ensuring good thermal stability of the device. Resulting from the boron‐induced grain refinement and dispersion strengthening, the average compressive strength and Vickers hardness of Ge_0.9Sb_0.1TeB_0.07 can be enhanced to ≈227 MPa and ≈202 H_v, respectively. The improved mechanical properties facilitate the assembly of devices and lower the interfacial contact resistance. As a synergy of increased ZT and mechanical strength, a high output power density of ≈1.76 W cm⁻² at ΔT = 425 K and an energy conversion efficiency of 7.4% at ΔT = 477 K can be achieved in the TE modules.