journal article·2025-09

Effects of shell thickness and gate voltage on the photoresponse of InAs/InP core/shell nanowires

Min Bai, Zhe Liu, Hui Huang, Shufeng Xia

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References (23)

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1. X. Yan, Y. Liu, C. Zha, X. Zhang, Y. Zhang, X. Ren, Non-〈111〉-oriented semiconductor nanowires: growth, properties, and applications. Nanoscale 15, 3032 (2023)10.1039/D2NR06421A ↗
2. J. Wallentin, N. Anttu, D. Asoli, M. Huffman, I. Åberg, M.H. Magnusson, G. Siefer, P. Fuss-Kailuweit, F. Dimroth, B. Witzigmann, H.Q. Xu, L. Samuelson, K. Deppert, M.T. Borgström, InP nanowire array solar cells achieving 13.8% efficiency by exceeding the ray optics limit. Science 339, 1057–1059 (2013)10.1126/science.1230969 ↗
3. X. Sun, A. Pashkin, F. Moebus, R. Hübner, S. Winnerl, M. Helm, E. Dimakis, Separated electronic and strain interfaces in core/dual-shell nanowires: unlocking the potential of strained GaAs for applications across near-infrared. Adv. Funct. Mater. (2024). https://doi.org/10.1002/adfm.20240088310.1002/adfm.202400883 ↗
4. J. Miao, W. Hu, N. Guo, Z. Lu, X. Liu, L. Liao, P. Chen, T. Jiang, S. Wu, J.C. Ho, L. Wang, X. Chen, W. Lu, High-responsivity graphene/InAs nanowire heterojunction near-infrared photodetectors with distinct photocurrent on/off ratios. Small 11, 936–942 (2015)10.1002/smll.201402312 ↗
5. J. Miao, W. Hu, N. Guo, Z. Lu, X. Zou, L. Liao, S. Shi, P. Chen, Z. Fan, J.C. Ho, T.X. Li, X.S. Chen, W. Lu, Single InAs nanowire room-temperature near-infrared photodetectors. ACS Nano 8, 3628–3635 (2014)10.1021/nn500201g ↗
6. Z. Liu, T. Luo, B. Liang, G. Chen, G. Yu, X. Xie, D. Chen, G.Z. Shen, High-detectivity InAs nanowire photodetectors with spectral response from ultraviolet to near-infrared. Nano Res. 6, 775–783 (2013)10.1007/s12274-013-0356-0 ↗
7. A. Brenneis, J. Overbeck, J. Treu, S. Hertenberger, S. Morkötter, M. Döblinger, J.J. Finley, G. Abstreiter, G. Koblmüller, A.W. Holleitner, Photocurrents in a single InAs nanowire/Silicon heterojunction. ACS Nano 9, 9849–9858 (2015)10.1021/acsnano.5b03017 ↗
8. W. Wei, X. Bao, C. Soci, Y. Ding, Z. Wang, D. Wang, Direct heteroepitaxy of vertical InAs nanowires on Si substrates for broad band photovoltaics and photodetection. Nano Lett. 9, 2926–2934 (2009)10.1021/nl901270n ↗
9. H.W. Shin, S.J. Lee, D.G. Kim, M.H. Bae, J. Heo, K.J. Choi, W.J. Choi, J. Choe, J.C. Shin, Short-wavelength infrared photodetector on Si employing strain-induced growth of very tall InAs nanowire arrays. Sci. Rep. 5, 10764 (2015)10.1038/srep10764 ↗
10. H. Fang, W. Hu, P. Wang, N. Guo, W. Luo, D. Zheng, F. Gong, M. Luo, H. Tian, X. Zhang, C. Luo, X. Wu, P. Chen, L. Liao, A. Pan, X. Chen, W. Lu, Visible light-assisted high-performance mid-infrared photodetectors based on single InAs nanowire. Nano Lett. 16, 6416–6424 (2016)10.1021/acs.nanolett.6b02860 ↗
11. P. Liu, H. Huang, X. Liu, M. Bai, D. Zhao, Z. Tang, X. Huang, J. Kim, J. Guo, Core–shell nanowire diode based on strain-engineered bandgap. Phys. Status Solidi A 212, 617–622 (2015)10.1002/pssa.201431727 ↗
12. X. Liu, P. Liu, H. Huang, C. Chen, T. Jin, Y. Zhang, X. Huang, Z. Jin, X. Li, Z. Tang, Growth and large-scale assembly of InAs/InP core/shell nanowire: effect of shell thickness on electrical characteristics. Nanotechnology 24, 245306 (2013)10.1088/0957-4484/24/24/245306 ↗
13. J.A. Alexander-Webber, C.K. Groschner, A.A. Sagade et al., Engineering the photoresponse of InAs nanowires. ACS Appl. Mater. Interfaces 9, 43993–44000 (2017)10.1021/acsami.7b14415 ↗
14. C.L. dos Santos, P. Piquini, Electronic and structural properties of InAs/InP core/shell nanowires: a first principles study. J. Appl. Phys. 111, 054315 (2012)10.1063/1.3692440 ↗
15. Y. Masumoto, K. Goto, S. Yoshida, Y. Sakuma, P. Mohan, J. Motohisa, T. Fukui, One- and two-dimensional spectral diffusion of type-II excitons in InP/InAs/InP core-multishell nanowires. Phys. Rev. B 82, 075313 (2010)10.1103/PhysRevB.82.075313 ↗
16. M. Bai, H. Huang, Z. Liu et al., InAs/InP core/shell nanowire gas sensor: effects of InP shell on sensitivity and long-term stability. Appl. Surf. Sci. 498, 143756 (2019)10.1016/j.apsusc.2019.143756 ↗
17. B.S. Sørensen, M. Aagesen, C. Sørensen, P. Lindelof, K. Martinez, J. Nygård, Ambipolar transistor behavior in p-doped InAs nanowires grown by molecular beam epitaxy. Appl. Phys. Lett. 92, 012119 (2008)10.1063/1.2821372 ↗
18. Q. Hang, F. Wang, W.E. Buhro, D. Janes, Ambipolar conduction in transistors using solution grown InAs nanowires with Cd doping. Appl. Phys. Lett. 90, 062108 (2007)10.1063/1.2457249 ↗
19. N. Guo, W. Hu, L. Liao, S.P. Yip, J.C. Ho, J. Miao, Z. Zhang, J. Zou, T. Jiang, S. Wu, X. Chen, W. Lu, Anomalous and highly efficient InAs nanowire phototransistors based on majority carrier transport at room temperature. Adv. Mater. 26, 8203–8209 (2014)10.1002/adma.201403664 ↗
20. Y. Yang, X. Peng, H.S. Kim, T. Kim, S. Jeon, H.K. Kang, W. Choi, J. Song, Y.J. Doh, D. Yu, Hot carrier trapping induced negative photoconductance in InAs nanowires toward novel nonvolatile memory. Nano Lett. 15, 5875–5882 (2015)10.1021/acs.nanolett.5b01962 ↗
21. J. Liu, Y. Liang, L. Wang, B. Wang, T. Zhang, F. Yi, Fabrication and photosensitivity of CdS photoresistor on silica nanopillars substrate. Mater. Sci. Semicond. Process. 56, 217–221 (2016)10.1016/j.mssp.2016.08.024 ↗
22. J. Li, X. Yan, F. Sun, X. Zhang, X. Ren, Anomalous photoconductive behavior of a single InAs nanowire photodetector. Appl. Phys. Lett. 107, 263103 (2015)10.1063/1.4938752 ↗
23. J.W.W. van Tilburg, R.E. Algra, W.G.G. Immink, M. Verheijen, E.P.A.M. Bakkers, L.P. Kouwenhoven, Surface passivated InAs/InP core/shell nanowires. Semicond. Sci. Technol. 25, 024011 (2010)10.1088/0268-1242/25/2/024011 ↗