Macro-defect-free homoepitaxial (100) β-Ga2O3 by MOVPE: Effect of miscut angles
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
References (53)
Show source-provided references
1. A review of Ga2O3 materials, processing, and devices10.1063/1.5006941 ↗
2. Progress of ultra-wide bandgap Ga2O3 semiconductor materials in power MOSFETs10.1109/TPEL.2019.2946367 ↗
3. A review of the most recent progresses of state-of-art gallium oxide power devices10.1088/1674-4926/40/1/011803 ↗
4. Brillouin zone and band structure of β-Ga2O310.1002/pssb.201451551 ↗
5. Growth and characterization of β-Ga2O3 thin films by molecular beam epitaxy for deep-UV photodetectors10.1063/1.4985855 ↗
6. Scaling-up of bulk β-Ga2O3 single crystals by the czochralski method
7. Bulk single crystals of β-Ga2O3 and Ga-based spinels as ultra-wide bandgap transparent semiconducting oxides10.1016/j.pcrysgrow.2020.100511 ↗
8. Fabrication and characterization of transparent conductive Sn-doped β-Ga2O3 single crystal10.1002/pssc.200674884 ↗
9. Large-size β-Ga2O3 single crystals and wafers10.1016/j.jcrysgro.2004.06.027 ↗
10. High-quality β-Ga2O3 single crystals grown by edge-defined film-fed growth10.7567/JJAP.55.1202A2 ↗
11. Growth of β-Ga2O3 single crystals using vertical bridgman method in ambient air10.1016/j.jcrysgro.2016.04.022 ↗
12. Ga2O3 schottky barrier diodes fabricated by using Single-Crystal β-Ga2O3 (010) substrates10.1109/LED.2013.2244057 ↗
13. Ga2O3 schottky barrier diodes with n−-Ga2O3 drift layers grown by HVPE
14. High breakdown voltage (−201) β-Ga2O3 schottky rectifiers10.1109/LED.2017.2703609 ↗
15. Epilayer thickness effect on the electrical and breakdown characteristics of vertical β-Ga2O3 schottky barrier diode10.1016/j.jcrysgro.2024.127941 ↗
16. Pulsed laser deposition of gallium oxide films for high performance solar-blind photodetectors10.1364/OME.5.001240 ↗
17. MBE grown Ga2O3 and its power device applications10.1016/j.jcrysgro.2013.02.015 ↗
18. Faceting and metal-exchange catalysis in (010) β-Ga2O3 thin films homoepitaxially grown by plasma-assisted molecular beam epitaxy10.1063/1.5054386 ↗
19. Towards smooth (010) β-Ga2O3 films homoepitaxially grown by plasma assisted molecular beam epitaxy: the impact of substrate offcut and metal-to-oxygen flux ratio10.1088/1361-6463/ab8eda ↗
20. Homoepitaxial growth of β-Ga2O3 layers by halide vapor phase epitaxy
21. Halide vapor phase epitaxial growth of β-Ga2O3 and α-Ga2O3 films10.1063/1.5055680 ↗
22. Large-area MOCVD growth of Ga2O3 in a rotating disc reactor10.1007/s11664-014-3566-7 ↗
23. Heteroepitaxial growth of α-, β-, γ-and κ-Ga2O3 phases by metalorganic vapor phase epitaxy10.1016/j.jcrysgro.2019.01.018 ↗
24. Impact of chamber pressure and Si-doping on the surface morphology and electrical properties of homoepitaxial (100) β-Ga2O3 thin films grown by MOVPE
25. Fast homoepitaxial growth of (100) β-Ga2O3 thin films via MOVPE10.1063/5.0069243 ↗
26. Probing charge transport and background doping in metal-organic chemical vapor deposition-grown (010) β-Ga2O3
27. MOCVD homoepitaxy of Si-doped (010) β-Ga2O3 thin films with superior transport properties10.1063/1.5109678 ↗
28. Over 6 μm thick MOCVD-grown low-background carrier density (1015 cm−3) high-mobility (010) β-Ga2O3 drift layers10.1063/5.0188773 ↗
29. 200 cm2/Vs electron mobility and controlled low 1015 cm−3 si doping in (010) β-Ga2O3 epitaxial drift layers10.1063/5.0230413 ↗
30. High-quality (001) β-Ga2O3 homoepitaxial growth by metalorganic chemical vapor deposition enabled by in situ indium surfactant10.1063/5.0092754 ↗
31. MOCVD growth of β-Ga2O3 on (001) Ga2O3 substrates10.1021/acs.cgd.4c00060 ↗
32. Enhancing the quality of homoepitaxial (−201) β-Ga2O3 thin film by MOCVD with in situ pulsed indium
33. High quality heavy sn doping β-Ga2O3 film with high mobility grown by time division transport metal organic chemical vapor deposition10.1016/j.jallcom.2024.175756 ↗
34. Evolution of planar defects during homoepitaxial growth of β-Ga2O3 layers on (100) substrates—A quantitative model10.1063/1.4971957 ↗
35. Substrate-orientation dependence of β-Ga2O3 (100), (010), (001), and (−201) homoepitaxy by indium-mediated metal-exchange catalyzed molecular beam epitaxy (MEXCAT-MBE)10.1063/1.5135772 ↗
36. Characteristics of 4-inch (100) oriented Mg-doped β-Ga2O3 bulk single crystals grown by a casting method10.1016/j.jallcom.2024.174162 ↗
37. MOCVD epitaxy of ultrawide bandgap β-(AlxGa1–x)2O3 with high-Al composition on (100) β-Ga2O3 substrates10.1021/acs.cgd.0c00864 ↗
38. Perspectives on MOVPE-grown (100) β-Ga2O3 thin films and its Al-alloy for power electronics application10.1063/5.0122886 ↗
39. Step flow growth of β-Ga2O3 thin films on vicinal (100) β-Ga2O3 substrates grown by MOVPE
40. High-mobility 4 μm MOVPE-grown (100) β-Ga2O3 film by parasitic particles suppression10.35848/1347-4065/acb360 ↗
41. Exploring miscut angle influence on (100) β-Ga2O3 homoepitaxial films growth: comparing MOVPE growth with MBE approaches10.1063/5.0170463 ↗
42. Homoepitaxy on GaN substrate with various treatments by metalorganic vapor phase epitaxy10.1016/j.jcrysgro.2010.10.018 ↗
43. Macro-defect-free homoepitaxial GaN growth through halogen-free vapor-phase epitaxy on native GaN seeds10.1016/j.jcrysgro.2018.05.002 ↗
44. Atomically controlled surfaces with step and terrace of β-Ga2O3 single crystal substrates for thin film growth10.1016/j.apsusc.2008.02.184 ↗
45. The lattice distortion of β-Ga2O3 film grown on c-plane sapphire10.1007/s10854-015-2821-x ↗
46. Crystal structure of β-Ga2O310.1063/1.1731237 ↗
47. Identification of burgers vectors of dislocations in monoclinic β-Ga2O3 via synchrotron x-ray topography10.1063/5.0007229 ↗
48. A review of β-Ga2O3 single crystal defects, their effects on device performance and their formation mechanism10.1088/1674-4926/40/1/011804 ↗
49. Prospects for β-Ga2O3: now and into the future10.35848/1882-0786/ad6b73 ↗
50. Structures, influences, and formation mechanism of planar defects on (100), (001) and (-201) planes in β-Ga2O3 crystals10.1039/D3CP04305C ↗
51. The influence of volume diffusion on crystal growth10.1016/0022-0248(75)90182-7 ↗
52. Kink densities along a crystal surface step at low temperatures and under nonequilibrium conditions10.1016/0022-0248(90)90062-P ↗
53. Analysis of crystal growth models for slightly supersaturated solutions10.1016/0022-0248(67)90034-6 ↗