Deep learning inter-atomic potential for irradiation damage in 3C-SiC
Source abstract
Abstract
We developed and validated an accurate inter-atomic potential for molecular dynamics simulation in cubic silicon carbide (3C-SiC) using a deep learning framework combined with smooth Ziegler–Biersack–Littmark (ZBL) screened nuclear repulsion potential interpolation. Comparisons of multiple important properties were made between the deep-learning potential and existing analytical potentials which are most commonly used in molecular dynamics simulations of 3C-SiC. Not only for equilibrium properties but also for significant properties of radiation damage such as defect formation energies and threshold displacement energies, our deep-learning potential gave closer predictions to the DFT criterion than analytical potentials. The deep-learning potential framework solved the long-standing dilemma that traditional empirical potentials currently applied in 3C-SiC radiation damage simulations gave large disparities with each other and were inconsistent with ab initio calculations . A more realistic depiction of the primary irradiation damage process in 3C-SiC can be given and the accuracy of classical molecular dynamics simulation for cubic silicon carbide can be expected to the level of quantum mechanics .
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Silicon Carbide Semiconductor Technologies · Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (61)
Show source-provided references
1. Atomistic study of intrinsic defect migration in 3C-SiC10.1103/PhysRevB.69.245205 ↗
2. Study of intrinsic defects in 3C-SiC using first-principles calculation with a hybrid functional10.1063/1.4821937 ↗
3. MD simulation study on defect evolution and doping efficiency of p-type doping of 3C-SiC by Al ion implantation with subsequent annealing10.1039/D0TC05374K ↗
4. MD simulation of two-temperature model in ion irradiation of 3C-SiC: Effects of electronic and nuclear stopping coupling, ion energy and crystal orientation10.1016/j.jnucmat.2021.153313 ↗
5. Historical review of computer simulation of radiation effects in materials10.1016/j.jnucmat.2019.04.028 ↗
6. Deep potential molecular dynamics: a scalable model with the accuracy of quantum mechanics10.1103/PhysRevLett.120.143001 ↗
7. Density functional theory models for radiation damage10.1146/annurev-matsci-071312-121626 ↗
8. Comparison of threshold displacement energies in β-SiC determined by classical potentials and ab initio calculations10.1016/j.nimb.2004.12.119 ↗
9. Molecular dynamics modeling of atomic displacement cascades in 3C–SiC: Comparison of interatomic potentials10.1016/j.jnucmat.2015.05.036 ↗
10. Interaction potential for silicon carbide: A molecular dynamics study of elastic constants and vibrational density of states for crystalline and amorphous silicon carbide10.1063/1.2724570 ↗
11. Analytical potential for atomistic simulations of silicon, carbon, and silicon carbide10.1103/PhysRevB.71.035211 ↗
12. Molecular dynamics simulations of extended defects and their evolution in 3C–SiC by different potentials10.1088/1361-651X/ab50c7 ↗
13. Molecular dynamics simulation studies of properties, preparation, and performance of silicon carbide materials: A review10.3390/en16031176 ↗
14. Modeling solid-state chemistry: Interatomic potentials for multicomponent systems10.1103/PhysRevB.39.5566 ↗
15. Chemical order in amorphous silicon carbide10.1103/PhysRevB.49.16349 ↗
16. Displacement threshold energies in β-SiC10.1016/S0022-3115(97)00304-8 ↗
17. Empirical potential approach for defect properties in 3C-SiC10.1016/S0168-583X(02)00600-6 ↗
18. Native defect properties in β-SiC: Ab initio and empirical potential calculations10.1016/S0168-583X(01)00430-X ↗
19. Interaction potential for silicon carbide: A molecular dynamics study of elastic constants and vibrational density of states for crystalline and amorphous silicon carbide10.1063/1.2724570 ↗
20. Hanchen Huangts, Nasr M Ghoniemt, Jimmy K Wongt, Michael I Baskest, Molecular dynamics determination of defect energetics in B-Sic using three representative empirical potentials.
21. Governing factors for the formation of 4H or 6H-SiC polytype during SiC crystal growth: An atomistic computational approach10.1016/j.jcrysgro.2013.12.007 ↗
22. Environment-dependent interatomic potential for bulk silicon10.1103/PhysRevB.56.8542 ↗
23. Carbon tri-interstitial defect: A model for the D II center10.1103/PhysRevB.86.144118 ↗
24. Atom-centered symmetry functions for constructing high-dimensional neural network potentials10.1063/1.3553717 ↗
25. The potential for machine learning in hybrid QM/MM calculations10.1063/1.5029879 ↗
26. Perspective: Machine learning potentials for atomistic simulations10.1063/1.4966192 ↗
27. Machine learning force fields: construction, validation, and outlook10.1021/acs.jpcc.6b10908 ↗
28. Active learning of uniformly accurate interatomic potentials for materials simulation
29. Machine-learning interatomic potential for radiation damage and defects in tungsten10.1103/PhysRevB.100.144105 ↗
30. Zhang · 2018
31. Ab initio phase diagram and nucleation of gallium10.1038/s41467-020-16372-9 ↗
32. Complex reaction processes in combustion unraveled by neural network-based molecular dynamics simulation10.1038/s41467-020-19497-z ↗
33. Phase diagram of a deep potential water model10.1103/PhysRevLett.126.236001 ↗
34. A deep learning interatomic potential developed for atomistic simulation of carbon materials10.1016/j.carbon.2021.09.062 ↗
35. Deep learning inter-atomic potential model for accurate irradiation damage simulations10.1063/1.5098061 ↗
36. Primary radiation damage in silicon from the viewpoint of a machine learning interatomic potential
37. Machine-learning interatomic potential for radiation damage effects in bcc-iron10.1016/j.commatsci.2021.110960 ↗
38. The stopping and range of ions in matter
39. Ab initio molecular dynamics for liquid metals10.1103/PhysRevB.47.558 ↗
40. Ab initio molecular-dynamics simulation of the liquid-metal–amorphous-semiconductor transition in germanium10.1103/PhysRevB.49.14251 ↗
41. Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set10.1016/0927-0256(96)00008-0 ↗
42. Generalized gradient approximation made simple10.1103/PhysRevLett.77.3865 ↗
43. DP-GEN: A concurrent learning platform for the generation of reliable deep learning based potential energy models10.1016/j.cpc.2020.107206 ↗
44. Impact of short-range forces on defect production from high-energy collisions10.1021/acs.jctc.5b01194 ↗
45. Exploring the chemical space of linear alkane pyrolysis via deep potential generator10.1021/acs.energyfuels.0c03211 ↗
46. Ab initio study of the stability of intrinsic and extrinsic Ag point defects in 3CSiC10.1016/j.jnucmat.2018.08.053 ↗
47. Accurate values of 3C, 2H, 4H, and 6H SiC elastic constants using DFT calculations and heuristic errors corrections10.1080/09500839.2021.1909167 ↗
48. Thermodynamic and kinetic properties of intrinsic defects and Mg transmutants in 3C–SiC determined by density functional theory10.1016/j.jnucmat.2014.01.035 ↗
49. Interaction between helium and intrinsic point defects in 3C-SiC single crystal10.1063/1.4985604 ↗
50. First principles phonon calculations in materials science10.1016/j.scriptamat.2015.07.021 ↗
51. Microscopic theory of force constants in the adiabatic approximation10.1103/PhysRevB.1.910 ↗
52. Interatomic force constants from first principles: The case of α-quartz10.1103/PhysRevB.50.13035 ↗
53. Dynamical matrices, Born effective charges, dielectric permittivity tensors, and interatomic force constants from density-functional perturbation theory10.1103/PhysRevB.55.10355 ↗
54. Pressure dependence of the optical phonons and transverse effective charge in 3 C -SiC10.1103/PhysRevB.25.3878 ↗
55. Physics of group IV elements and III-V compounds
56. Determination of the phonon dispersion of zinc blende (3C) silicon carbide by inelastic x-ray scattering10.1063/1.1484241 ↗
57. Molecular dynamics simulations of threshold displacement energies in fe10.1016/j.nimb.2006.01.003 ↗
58. Ab initio molecular dynamics simulations of ion–solid interactions in Gd 2 zr 2 O 7 and Gd 2 Ti 2 O 710.1039/c2tc00192f ↗
59. G. Lucas, L. Pizzagalli, Ab initio molecular dynamics calculations of threshold displacement energies in silicon carbide, Phys. Rev. B 4.
60. Influence of high pressure on the threshold displacement energies in silicon carbide: A car–Parrinello molecular dynamics approach10.1016/j.nimb.2011.12.035 ↗
61. Visualization and analysis of atomistic simulation data with OVITO–the Open Visualization Tool10.1088/0965-0393/18/1/015012 ↗