High Band Degeneracy Contributes to High Thermoelectric Performance in p‐Type Half‐Heusler Compounds
Source abstract
Abstract
Half‐Heusler (HH) compounds are important high temperature thermoelectric (TE) materials and have attracted considerable attention in the recent years. High figure of merit zT values of 0.8 to 1.0 have been obtained in n‐type ZrNiSn‐based HH compounds. However, developing high performance p‐type HH compounds are still a big challenge. Here, it is shown that a new p‐type HH alloy with a high band degeneracy of 8, Ti‐doped FeV0.6Nb0.4Sb, can achieve a high zT of 0.8, which is one of the highest reported values in the p‐type HH compounds. Although the band effective mass of this system is found to be high, which may lead to a low mobility, its low deformation potential and low alloy scattering potential both contribute to a reasonably high mobility. The enhanced phonon scattering by alloying leads to a reduced lattice thermal conductivity. The achieved high zT demonstrates that the p‐type Ti doped FeV0.6Nb0.4Sb HH alloys are promising as TE materials and offer an excellent TE performance match with n‐type ones for high temperature power generation.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Advanced Thermoelectric Materials and Devices · Heusler alloys: electronic and magnetic properties · 2D Materials and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
State Key Laboratory of Silicon Materials Department of Materials Science and Engineering Zhejiang University Hangzhou 310027 China
Key Laboratory of Advanced Materials and Applications for Batteries of Zhejiang Province Zhejiang University Hangzhou 310027 China
School of Materials Science and Engineering Tongji University Shanghai 201804 China
Materials Science California Institute of Technology Pasadena CA 91125 USA
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