Optimization of the Ti3SiC2 MAX phase synthesis
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Abstract
Abstract The synthesis of Ti3SiC2 MAX phase by self-propagating high-temperature synthesis (SHS) and pressureless argon shielding synthesis has been investigated following different pathways pertaining to the reactant systems Ti/Si/C, Ti/SiC/C and Ti/TiC/Si. Silicon in excess ranging from 10 to 50 mol% was employed to obtain powders mainly constituted by Ti3SiC2. Optimizing the excess of silicon and the pressing technique, the resultant powders with Ti3SiC2 content near to 100% were obtained. Result was consequent to the use of pressureless argon shielding synthesis obtained with 30 mol% of silicon excess in the examined different systems. The Ti3SiC2 was also obtained by SHS, but with lower proportion (88% and 86% from 3Ti + 1.2SiC + 0.8C and 3Ti + 1.3Si + 2C respectively). These results driving from XRD patterns were confirmed by FESEM observations and the EDAX analyses.
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