Far-infrared magnetospectroscopy of HgTe and Hg1−xMnxTe epilayers grown by molecular-beam epitaxy

Far-infrared magnetotransmission experiments were performed on HgTe and Hg1−xMnxTe epilayers grown by molecular-beam epitaxy. The measurements were carried out in the Faraday and Voigt geometries, at fixed photon energies between 2.5 and 12.8 meV, in the temperature range 1.6 K<T<200 K, in magnetic fields up to 6 T. The results were analyzed in terms of the Pidgeon–Brown model, with the spin–spin exchange interaction included for the case of Hg1−xMnxTe . It is found that both HgTe and Hg1−xMnxTe epilayers have excellent electronic properties, which compare favorably with the best quality intrinsic bulk crystals, and which show no effects of strain due to the lattice mismatch with the substrate.