Resistive switching behavior and bandgap analysis of two-dimensional HfS2 via density functional theory simulations
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
References (27)
Show source-provided references
1. Kuc · 2014 · vol. 11 · 110.1039/9781782620112-00001 ↗
2. Transition metal chalcogenides: ultrathin inorganic materials with tunable electronic properties10.1021/ar500277z ↗
3. Gate tunable transport in graphene/MoS₂/(Cr/au) vertical field-effect transistors10.3390/nano8010014 ↗
4. Recent advances of two-dimensional nanomaterials for electrochemical capacitors10.1002/cssc.201903260 ↗
5. Circuit-level memory technologies and applications based on 2D materials10.1002/adma.202202371 ↗
6. Nonvolatile and volatile resistive switching characteristics in MoS2 thin film for RRAM application10.1016/j.jallcom.2023.172443 ↗
7. Mechanism for resistive switching in chalcogenide-based electrochemical metallization memory cells10.1063/1.4921089 ↗
8. Analyzing the carrier mobility in transition-metal dichalcogenide MoS2 field-effect transistors10.1002/adfm.201604093 ↗
9. Reliability characteristics and conduction mechanisms in resistive switching memory devices using ZnO thin films10.1186/1556-276X-7-178 ↗
10. Low-field transport in SiO210.1016/j.jnoncrysol.2016.12.038 ↗
11. High mobility HfO2 n- and p-channel transistors10.1016/S0167-9317(01)00669-4 ↗
12. High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals10.1038/ncomms2018 ↗
13. Few-layer HfS2 transistors10.1038/srep22277 ↗
14. Memristive devices based on two-dimensional transition metal chalcogenides for neuromorphic computing10.1007/s40820-021-00784-3 ↗
15. 2D layered materials for memristive and neuromorphic applications10.1002/aelm.201901107 ↗
16. Yu · 2014 · 2017
17. Resistance switching memory in perovskite oxides10.1016/j.aop.2015.03.028 ↗
18. Fabricating molybdenum disulfide memristors10.1021/acsaelm.9b00655 ↗
19. Sulfurization engineering of one-step low-temperature MoS2 and WS2 thin films for memristor device applications10.1002/aelm.202100515 ↗
20. Double-gate MoS2 field-effect transistor with a multilayer graphene floating gate: a versatile device for logic, memory, and synaptic applications10.1021/acsami.0c08802 ↗
21. Ballistic performance of quasi-one-dimensional hafnium disulfide field-effect transistors10.3390/electronics13061048 ↗
22. Realization and performance analysis of facile-processed μ-IDE-based multilayer HfS2/HfO2 transistors10.1109/TED.2019.2917323 ↗
23. Ultrasensitive phototransistors based on few-layered HfS210.1002/adma.201503864 ↗
24. Mitigating tunneling leakage in ultrascaled HfS2 pMOS devices with uniaxial strain10.1109/LED.2022.3179228 ↗
25. Effects of al, V, Cr, Mn, Ni, Nb, Mo, and W addition to BCC-Fe on its elastic properties and hardness for a biomass boiler: first principles approaches, Korean10.3365/KJMM.2019.57.6.374 ↗
26. Facile and accelerated production of RuO2 monolayers via a dual-step intercalation process10.1039/C9QI01678C ↗
27. A reasonable DFT calculation method for hybrid organic–inorganic halide perovskites10.3365/KJMM.2021.59.4.256 ↗