journal article·2019-01

Effect of C and O dopant atoms on the electronic properties of black phosphorus nanotubes

Xinyue Dai, Lishu Zhang, Zhichao Wang, Jie Li, Hui Li

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Abstract

Abstract The electronic structures of the C and O-doped black phosphorene are investigated theoretically by using first-principles density functional theory (DFT). The results show that they are all metallic. And the black phosphorus nanotubes (BPNTs) rolled from the pure, C-doped and O-doped black phosphorene with different radii and chiralities are also studied. C and O atoms substitute for P atoms enable the armchair BPNT to have a metallic feature with several bands cross the Fermi level. Surprisingly, the number of the bands cross the Fermi level just equals the number of dopant atoms. But for the zigzag BPNT, when the O atoms decrease to 4, no band crosses the Fermi level and at which a minimal energy gap appears. Furthermore, the transport properties of two-probe devices fabricated by the pure A24 and Z34 BPNTs together with the C-doped A24 BPNTs are investigated theoretically. These calculated results show that the electronic transport properties of the A24 BPNT can be significant changed by C dopant atom and vary with the number of the doped atoms. The current-voltage curves of these BPNTs with C atoms substitute for P atoms present sinusoidal characteristics under low bias and negative differential resistance (NDR) properties. This study provides an effective route for tuning the electronic structures of black phosphorene and BPNTs and thus the transport properties of their electronic devices. And the unique properties of these black phosphorene and BPNTs also offer an inspiration for their subsequent experiments.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: 2D Materials and Applications · MXene and MAX Phase Materials · Graphene research and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

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