Theoretical study of accumulation electron layers at ITO-dielectric interfaces and related nanostructures

Abstract We present the transfer matrix method for accumulation electron layers at ITO-dielectric interfaces. Meanwhile, the optical transmission properties of related nanostructures are investigated in the visible frequencies. Our results show that the nanostructures possess band-stop property under corresponding conditions. It is observed that the performance of band-stop is critically dependent on the electron density and on the number of accumulation electron layers. In addition, the thickness of ITO layers and the condition of incident lights also influence the band-stop properties. Moreover, we find an optical switch behavior when the thickness of ITO layer is set as 5.0 nm. This work may provide means for designing tunable optical devices.