Purification of β -SiC powders by heat treatment in vacuum
Source abstract
Abstract
Three kinds of particle size products (i.e., 2.5, 5.0, and 10 μm) synthesized by multi-heat source method and separated by air were selected as the raw materials to study the purification by heat treating at 1800 °C and 2100 °C for 2 h, respectively. Chemical analysis, inductively coupled plasma-optical emission spectrometry (ICP-OES), X-ray powder diffraction (XRD), scanning electron microscopy (SEM), and particle size test were used to compare the changes of purity, structure, morphology, and particle size before and after heat treatment. The results show that the impurities of β-SiC powders with three sizes can be effectively removed after heat treatment. A higher temperature favors a better purification effect. The β-α phase transformation occurs at 2100 °C. The smaller the particle size, the higher the degree of phase transformation and the larger the product particle size. In order to maintain the crystal phase and particle size of β-SiC, 1800 °C should be selected for purification. The purity of β-SiC powder after treatment can reach more than 99% and makes great potentials for preparing semiconductive composites.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Advanced ceramic materials synthesis · Aluminum Alloys Composites Properties · Silicon Carbide Semiconductor Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (27)
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