Mechanism of Carbon and Oxygen Incorporation in Silicon Single Crystals Grown by the Czochralski (Cz) Technique
Source abstract
Abstract
This paper presents a new model related to the incorporation of oxygen and carbon in silicon single crystals grown by the Czochralski (Cz) method. The segregation processes of oxygen and carbon involve several chemical species and are not independent. The connection is due to the presence of the molecule not only in the gas phase but also in the molten silicon and in the solidifying crystal. This model proposes the utilization of a global segregation coefficient in order to explain the scatter in the values of the current effective segregation coefficient of oxygen reported in literature.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Solidification and crystal growth phenomena · Silicon and Solar Cell Technologies
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Affiliations
Research and Production of Semiconductor Materials, Sos. Garii Catelu nr. 5, sect. 3, Bucharest, Romania
References
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