DataVXJournal of The Electrochemical SocietyPaper
article·2007-01-01

Very High Density (44 fF∕μm[sup 2]) SrTiO[sub 3] MIM Capacitors for RF Applications

K.C. Chiang, Jun-Ting Lin, Han Pan, C. N. Hsiao, W.J. Chen, Hsuan‐Ling Kao, I−Ta Hsieh, Albert Chin

Journal of The Electrochemical Society
Publisher page
Source abstract

Abstract

We demonstrate a high-performance metal-insulator-metal (MIM) radio-frequency (rf) capacitor with good device integrity of very high capacitance density of , small voltage linearity α of at , and a small capacitance reduction 3.5% from to . Such large capacitance density can largely reduce the device size used in rf integrated circuits.
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Research context

OpenAlex topics: Semiconductor materials and devices · Ferroelectric and Negative Capacitance Devices · Ferroelectric and Piezoelectric Materials

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