Effect of NH[sub 3] on Film Properties of MOCVD Tungsten Nitride from Cl[sub 4](CH[sub 3]CN)W(N[sup i]Pr)

Thin films of tungsten nitride were deposited from by metallorganic chemical vapor deposition (MOCVD) in the presence and absence of ammonia coreactant. Films were analyzed by X-ray diffraction, Auger electron spectroscopy, and X-ray photoelectron spectroscopy (XPS). Films grown with had increased nitrogen levels and decreased carbon and oxygen levels relative to films grown without over the entire deposition temperature range (450-700°C). Deposition with at higher temperature (⩾600°C) led to higher crystallinity. Binding energies from XPS measurements were consistent with the formation of (or and in the films, regardless of whether was present. The addition of at lower deposition temperature increased film resistivity significantly. © 2004 The Electrochemical Society. All rights reserved.