Deposition of La[sub 2]O[sub 3] Films by Direct Liquid Injection Metallorganic Chemical Vapor Deposition

A novel lanthanum precursor where tmhd is 2,2,6,6-tetramethyl-3,5-heptanedione, and TETEA is triethoxytriethyleneamine, has been characterized by thermogravimetric analysis and differential scanning calorimetry. Lanthanum oxide thin films deposited at 325-450°C by direct liquid injection metallorganic chemical vapor deposition process had a dense and smooth morphology. film deposited at 325°C had a cubic phase with a low X-ray diffraction (XRD) intensity, while at deposition temperatures above 375°C, XRD patterns indicated that both hexagonal and cubic phases of were formed. The measured capacitance of films deposited at 350°C was 70 pF that gave an effective dielectric constant of 25. film annealed at 500°C showed a low leakage current of at 5 V. © 2002 The Electrochemical Society. All rights reserved.