Application of a CMP Model to Tungsten CMP
Source abstract
Abstract
A general model of chemical mechanical polishing (CMP) has been derived which shows the dependence of the polishing rate on the concentration of chemicals and abrasives in the slurry. This paper applies the model to tungsten CMP and describes the chemistry of tungsten CMP in some detail. © 2001 The Electrochemical Society. All rights reserved.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Surface Polishing Techniques · Advanced machining processes and optimization · Advanced Machining and Optimization Techniques
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