The Direct Bonding of Metals to Ceramics by the Gas‐Metal Eutectic Method
Source abstract
Abstract
The direct bonding of metals to ceramics is possible utilizing a gas‐metal eutectic. The mechanism of direct bonding of copper foil to ceramics in a slightly oxidizing atmosphere is presented. It involves the formation of eutectic melt between copper and oxygen at a temperature slightly below the melting point of copper, which serves to bring the foil into intimate contact with the substrate. A brief review of other metal‐ceramic bonding techniques is given for comparison. Metals to which this technique is applicable include Cu, Fe, Ni, Co, Ag, Cr, Mo, and Al.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: 3D IC and TSV technologies · Electronic Packaging and Soldering Technologies · Advanced ceramic materials synthesis
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Affiliations
General Electric Corporate Research and Development, Schenectady, New York 12301
General Electric Company, Heavy Military Electronic Systems Product Department, Syracuse, New York 13201
References
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