Resistive Switching Characteristics of Solution-Processed Transparent TiO[sub x] for Nonvolatile Memory Application

We propose a solution-processed transparent -based resistive switching random access memory (ReRAM) device. Electronically active was prepared by sol–gel spin coating of a titanium(IV) isopropoxide precursor on an indium tin oxide-coated glass. The prepared film is completely transparent in the visible range and has an amorphous structure. The fabricated -based ReRAM device exhibits distinct resistive switching under consecutive dc voltage sweeps of . The device also exhibits good memory performance, including fast switching speed with a pulse width of , stable pulse endurance over 1000 cycles, and excellent retention characteristics at up to . In addition, based on the plot and X-ray photoelectron spectroscopy analysis, we postulate that the fabricated device is operated by the reversible formation/rupture of the conducting filament in the oxygen-deficient layer.