Charge in SiO[sub 2]-Al[sub 2]O[sub 3] Double Layers on Silicon

The negative charge in double layers was found to be located at the insulator‐insulator interface. This charge is independent of the thickness of the and inversely dependent on the thickness. Evidence for a constant voltage drop across the during deposition was found for polycrystalline , N 2 ‐deposited and O 2 ‐deposited amorphous . It is suggested that the traps at the interface are due to oxygen vacancies.